A Picosecond Pulsed Cold-Cathode Electron Gun for Ultrafast Electron Characterization and High-Frequency Radiation Source Applications

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-09-18 DOI:10.1109/LED.2024.3462962

Dong Han;Yan Shen;Ningsheng Xu;Zheyu Song;Pengbin Xu;Shuai Tang;Yu Zhang;Huanjun Chen;Shaozhi Deng

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引用次数: 0

Abstract

Ultrafast and ultrashort pulsed electron beams with high peak energy facilitate important applications, such as ultrafast electron characterization and high-frequency radiation source. The development of electron gun device, which simultaneously meets the requirements of ultrashort duration, high efficiency, and miniaturization, remains a challenge. Here, a carbon nanotubes cold-cathode electron gun by a photo-electric synergistic excitation is proposed, to successfully generate an ultrafast and ultrashort pulsed electron beam with repetition frequency of 1 MHz and pulse width of 278 ps. With optimizing the gun structure, a high-performance electron beam was obtained with averaged (peak) beam current over

$38~\mu $

A (137 mA), averaged (peak) current density over 0.12 A cm

$^{-{2}}$

(435 A cm

$^{-{2}}\text {)}$

, and electron transmittance higher than 64%, co-excited by electrostatic field of 1.88 V

$\mu $

$^{-{1}}$

and peak laser intensity of 7.68 MW cm

$^{-{2}}$

. This electron gun shows advantages of low excitation threshold, narrow pulse width and directly generating modulated electron beam from the laser excitation.

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用于超快电子表征和高频辐射源应用的皮秒脉冲冷阴极电子枪

具有高峰值能量的超快和超短脉冲电子束为超快电子特性分析和高频辐射源等重要应用提供了便利。开发同时满足超短持续时间、高效率和小型化要求的电子枪装置仍是一项挑战。本文提出了一种光电协同激发的碳纳米管冷阴极电子枪，成功地产生了重复频率为1 MHz、脉冲宽度为278 ps的超快超短脉冲电子束。通过优化电子枪结构，获得了高性能电子束，平均（峰值）束流超过 38~\mu $ A (137 mA)，平均（峰值）电流密度超过 0.12 A cm $^{-{2}}$ (435 A cm $^{-{2}}\text {)}$，电子透射率高于 64%，同时静电场为 1.88 V $\mu $ m $^{-{1}}$ ，峰值激光强度为 7.68 MW cm $^{-{2}}$ 。这种电子枪具有激发阈值低、脉冲宽度窄、可直接从激光激发产生调制电子束等优点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.