Kr-Plasma Process for Conductance Control of MFSFET With FeND-HfO₂ Gate Insulator

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-09-18 DOI:10.1109/JEDS.2024.3462930

S. Ohmi;M. Tanuma;J.W. Shin

引用次数: 0

Abstract

In this work, we have investigated the conductance control of the metal-ferroelectrics-Si field-effect transistor (MFSFET) utilizing 5 nm thick ferroelectric nondoped

$\rm HfO_{2}$

(FeND-HfO2) gate insulator. The Kr-plasma process is effective to decrease the plasma damage compared to the Ar-plasma process during the in-situ deposition of FeND-HfO2 and Pt gate electrode by RF-magnetron sputtering. The precise control such as less than 20 mV was realized which led to the conductance control for 10 states from 0 to

$0.6~\mu $

$\mu $

m both for potentiation and depression operations with the input pulses of

$\mathbf {\pm 3}$

V/100 ns.

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等离子体克尔工艺用于带有 FeND-HfO2 栅极绝缘体的 MFSFET 的电导控制

在这项研究中，我们利用 5 nm 厚的铁电非掺杂 $\rm HfO_{2}$ (FeND-HfO2) 栅极绝缘体研究了金属-铁电-硅场效应晶体管 (MFSFET) 的电导控制。在通过射频-磁控溅射原位沉积 FeND-HfO2 和铂栅电极的过程中，Kr-等离子体工艺比 Ar-等离子体工艺能有效减少等离子体损伤。实现了小于 20 mV 的精确控制，从而在 $\mathbf {\pm 3}$ V/100 ns 的输入脉冲下，对 10 个状态（从 0 到 $0.6~\mu $ S/ $\mu $ m）进行了电导控制，包括电位和抑制操作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.