{"title":"Kr-Plasma Process for Conductance Control of MFSFET With FeND-HfO₂ Gate Insulator","authors":"S. Ohmi;M. Tanuma;J.W. Shin","doi":"10.1109/JEDS.2024.3462930","DOIUrl":null,"url":null,"abstract":"In this work, we have investigated the conductance control of the metal-ferroelectrics-Si field-effect transistor (MFSFET) utilizing 5 nm thick ferroelectric nondoped \n<inline-formula> <tex-math>$\\rm HfO_{2}$ </tex-math></inline-formula>\n (FeND-HfO2) gate insulator. The Kr-plasma process is effective to decrease the plasma damage compared to the Ar-plasma process during the in-situ deposition of FeND-HfO2 and Pt gate electrode by RF-magnetron sputtering. The precise control such as less than 20 mV was realized which led to the conductance control for 10 states from 0 to \n<inline-formula> <tex-math>$0.6~\\mu $ </tex-math></inline-formula>\nS/\n<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>\nm both for potentiation and depression operations with the input pulses of \n<inline-formula> <tex-math>$\\mathbf {\\pm 3}$ </tex-math></inline-formula>\n V/100 ns.","PeriodicalId":2,"journal":{"name":"ACS Applied Bio Materials","volume":null,"pages":null},"PeriodicalIF":4.6000,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10682993","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Bio Materials","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10682993/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, BIOMATERIALS","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we have investigated the conductance control of the metal-ferroelectrics-Si field-effect transistor (MFSFET) utilizing 5 nm thick ferroelectric nondoped
$\rm HfO_{2}$
(FeND-HfO2) gate insulator. The Kr-plasma process is effective to decrease the plasma damage compared to the Ar-plasma process during the in-situ deposition of FeND-HfO2 and Pt gate electrode by RF-magnetron sputtering. The precise control such as less than 20 mV was realized which led to the conductance control for 10 states from 0 to
$0.6~\mu $
S/
$\mu $
m both for potentiation and depression operations with the input pulses of
$\mathbf {\pm 3}$
V/100 ns.
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