Application of cobalt-sulphide to suppress charge recombinations in polymer solar cell

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2024-09-18 DOI:10.1016/j.mssp.2024.108917

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引用次数: 0

Abstract

Cobalt-sulphide nano-particles were synthesized and employed in absorber layer of thin film organic solar cells (TFOSCs). The incorporation of nano-particles was designed to assist exciton dissociation processes and boost the collection photo-generated currents in TFOSC. Solar cells were fabricated from polymers blend photo-active layer consisting of Poly[[4,8- bis[(2-ethylhexyl) oxy] benzo[1,2-b:4,5-b] dithiophene2,6-diyl] [3 -fluoro-2-[(2- ethylhexyl)carbonyl]thieno[3,4- b] thiophenediyl]] (PTB7)and [6,6]-phenyl C₇₁-butyric acid methyl ester (PC₇₁BM) with/without the incorporation CoS. The optical and electrical properties of the active layers are found to be highly impacted by the inclusion of CoS NPs in the medium. Consequently, significant improvement on the collection of photo-currents was recorded that led to high power conversion efficiency of the devices compared to the reference cell. The influence of CoS nano-particles is found to be dependent on its concentration in the medium where the best solar cell performance recorded, in this experiment, was at 1wt% CoS, which brings about an increase in efficiency by 37%.

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研究人员合成了硫化钴纳米粒子，并将其用于薄膜有机太阳能电池（TFOSC）的吸收层。纳米颗粒的加入旨在帮助激子解离过程，并提高薄膜有机太阳能电池中收集的光生电流。太阳能电池是由聚[[4,8-双[（2-乙基己基）氧基]苯并[1,2-b：3-氟-2-[(2-乙基己基)羰基]噻吩并[3,4-b]噻吩二基]]（PTB7）和[6,6]-苯基 C71-丁酸甲酯（PC71BM）组成的混合光活性层，并加入/不加入 CoS。在介质中加入 CoS NPs 会对活性层的光学和电学特性产生很大影响。因此，与参考电池相比，光电流的收集得到了显著改善，从而提高了器件的功率转换效率。CoS 纳米粒子的影响取决于其在介质中的浓度，在本实验中，CoS 浓度为 1wt% 时太阳能电池性能最佳，效率提高了 37%。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.

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