Fabrication of through alumina vias (TAV) by ultrasonic micromachining for advanced packaging applications

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
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Abstract

This article presents the fabrication of a high aspect ratio through alumina-vias (TAV) by combining ultrasonic micromachining (USM), electroless plating, and copper electrodeposition. Various horn designs, i.e., tapered, stepped, exponential, and hybrid horns, were analyzed to achieve a uniform longitudinal vibration in a 6 × 6 multi-tip tool assembly. The modal analysis determined the horn length, and harmonic analysis provided the stress distribution and vibrational amplitude. The tapered horn design was selected for its superior vibration amplification and reduced stresses. Finite element modeling predicted the geometric profiles of the microvias at various USM parameters. Experimental validation showed less than 5 % error in the depths of the microvias. Using the optimized USM parameters, a 6 × 6 array of blind and through-holes was created in a 3 mm thick alumina substrate with an average feed rate of 180 μm/min. The average tool wear was observed to be 0.5 mm when drilling through 3 mm thick alumina. Electroless deposition created a ∼100 nm seed layer on the alumina substrate and achieved good adhesion with via sidewalls. The through-holes were partially filled with a 60 μm thick copper layer by electrodeposition to create through-alumina vias (TAV) that can be used as 3D interconnects in the packaging of high-power electronics.

本文介绍了通过结合超声波微机械加工(USM)、无电解电镀和电沉积铜来制造高纵横比通孔铝钒合金(TAV)的方法。分析了各种喇叭设计,即锥形、阶梯形、指数形和混合喇叭,以在 6 × 6 多尖工具组件中实现均匀的纵向振动。模态分析确定了喇叭长度,谐波分析提供了应力分布和振动幅度。之所以选择锥形喇叭设计,是因为它具有出色的振动放大效果并能减少应力。有限元建模预测了不同 USM 参数下的微孔几何轮廓。实验验证表明,微孔深度误差小于 5%。利用优化的 USM 参数,以 180 μm/min 的平均进给速度在 3 毫米厚的氧化铝基板上创建了 6 × 6 的盲孔和通孔阵列。在 3 毫米厚的氧化铝上钻孔时,平均刀具磨损为 0.5 毫米。无电解沉积在氧化铝基底上形成了一个 ∼100 nm 的种子层,并与通孔侧壁实现了良好的粘合。通过电沉积将 60 μm 厚的铜层部分填充到通孔中,从而形成氧化铝通孔 (TAV),这种通孔可用作大功率电子器件封装中的三维互连器件。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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