Combinatorial Optimization of Metal‐Insulator‐Insulator‐Metal (MIIM) Diodes With Thickness‐Gradient Films via Spatial Atomic Layer Deposition

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2024-09-17 DOI:10.1002/aelm.202400093

Abdullah H. Alshehri, Hatameh Asgarimoghaddam, Louis‐Vincent Delumeau, Viet Huong Nguyen, AlRasheed Ali, Mutabe Aljaghtham, Ali Alamry, Dogu Ozyigit, Mustafa Yavuz, Kevin P. Musselman

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Abstract

Metal‐insulator‐insulator‐metal (MIIM) diodes with thickness‐gradient films for the insulator layers are fabricated for the first time. Spatially varying atmospheric‐pressure chemical vapor deposition is used to deposit ZnO and Al2O3 films with orthogonal gradient directions, producing 414 MIIM diodes with 414 different ZnO/Al2O3 film‐thickness combinations on a single substrate for combinatorial and high‐throughput optimization. The nm‐scale ZnO/Al2O3 films are printed in only 2 min and the entire device fabrication takes 7 h, which is much less than conventional approaches for investigating many insulator‐thickness combinations. Rapid identification of the optimal thickness combination is demonstrated; high‐performance diodes (asymmetry = 227, nonlinearity = 13.1, and responsivity = 12 A/W) are observed when a trap‐assisted tunneling mechanism is dominant for insulator thicknesses of 3.4–4.4 nm (ZnO) and 7.4 nm (Al2O3).

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通过空间原子层沉积实现具有厚度梯度薄膜的金属-绝缘体-绝缘体-金属 (MIIM) 二极管的组合优化

首次制造出绝缘层厚度梯度薄膜的金属-绝缘体-绝缘体-金属（MIIM）二极管。利用空间变化的大气压化学气相沉积法沉积出具有正交梯度方向的氧化锌和氧化铝薄膜，在单一基底上制造出 414 个具有 414 种不同氧化锌/氧化铝薄膜厚度组合的 MIIM 二极管，从而实现了组合和高通量优化。纳米级 ZnO/Al2O3 薄膜的印刷仅需 2 分钟，而整个器件的制造仅需 7 小时，远远少于研究多种绝缘体厚度组合的传统方法。实验证明了最佳厚度组合的快速识别；当阱辅助隧道机制在绝缘体厚度为 3.4-4.4 nm（氧化锌）和 7.4 nm（氧化铝）时占主导地位时，可观察到高性能二极管（不对称 = 227，非线性 = 13.1，响应率 = 12 A/W）。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.