{"title":"Investigation on the microstructure, mechanical properties and chlorine resistance of fine aluminum alloy wires","authors":"Bo-Ding Wu, Fei-Yi Hung, Keng-Yi Hsu","doi":"10.1016/j.microrel.2024.115498","DOIUrl":null,"url":null,"abstract":"<div><p>Wire bonding is a fundamental and mature technology in semiconductor packaging process, primarily using materials such as gold, silver, aluminum, and copper for the wires. To address application limitations of aluminum wires, such as low electromigration resistance and limited ductility, techniques including to enhance alloying (with Zn and Si), heat treatment, and surface treatment are employed to enhance the performance of aluminum alloy wires and broaden their application value. This study selects Al-3Zn-0.3Si (AZS303) and Al-7Zn-0.3Si (AZS703), with AZS303 undergoing gold plating to produce AC-AZS303 wires. Various high-temperature heat treatments are applied, verifying that under 400 °C conditions, the AZS series aluminum alloy wires exhibit grain growth and form single-crystal equiaxed grain structures, resulting in stable mechanical properties and excellent electrical performance. Additionally, the AC-AZS303 wires optimize resistance values through gold layer diffusion induced by the electrothermal effect.</p><p>Chlorine experiments indicates that the gold plating on AC-AZS303 can't enhance the aluminum wire's resistance to chlorine corrosion. However, the alloying effect of zine and silicon elements imparts excellent chlorine corrosion resistance to the Al-Zn-Si wires. This study of bonding properties examines the bond strength and observes the bonded area of Al-Zn-Si wires after bonding. It is noted that the H400-AZS303 wire exhibits the best bond strength and bonding area, demonstrating good bonding with the substrate.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115498"},"PeriodicalIF":1.6000,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424001781","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Wire bonding is a fundamental and mature technology in semiconductor packaging process, primarily using materials such as gold, silver, aluminum, and copper for the wires. To address application limitations of aluminum wires, such as low electromigration resistance and limited ductility, techniques including to enhance alloying (with Zn and Si), heat treatment, and surface treatment are employed to enhance the performance of aluminum alloy wires and broaden their application value. This study selects Al-3Zn-0.3Si (AZS303) and Al-7Zn-0.3Si (AZS703), with AZS303 undergoing gold plating to produce AC-AZS303 wires. Various high-temperature heat treatments are applied, verifying that under 400 °C conditions, the AZS series aluminum alloy wires exhibit grain growth and form single-crystal equiaxed grain structures, resulting in stable mechanical properties and excellent electrical performance. Additionally, the AC-AZS303 wires optimize resistance values through gold layer diffusion induced by the electrothermal effect.
Chlorine experiments indicates that the gold plating on AC-AZS303 can't enhance the aluminum wire's resistance to chlorine corrosion. However, the alloying effect of zine and silicon elements imparts excellent chlorine corrosion resistance to the Al-Zn-Si wires. This study of bonding properties examines the bond strength and observes the bonded area of Al-Zn-Si wires after bonding. It is noted that the H400-AZS303 wire exhibits the best bond strength and bonding area, demonstrating good bonding with the substrate.
期刊介绍：
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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