Cryogenic Ferroelectricity of HZO Capacitors on a III–V Semiconductor

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Mamidala Karthik Ram;Hannes Dahlberg;Lars-Erik Wernersson
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引用次数: 0

Abstract

Non-volatile cryogenic memories are crucial for realizing energy-efficient and scaled quantum computing systems. In this letter, we evaluate the cryogenic performance of an HZO-based ferroelectric capacitor (FeCAP) with a compound semiconductor (InAs) as the bottom electrode. We demonstrate that near identical remnant polarization can be obtained at 14 K compared to room temperature by increasing the voltage during the wake-up process. The switching dynamics of the FeCAP are studied at temperatures as low as 50 K with measured data analyzed by the nucleation-limited switching model. These results together with the increased endurance at cryogenic temperatures present promising opportunities for cryogenic ferroelectrics.
III-V 半导体上 HZO 电容器的低温铁电性
非易失性低温存储器对于实现高能效、大规模量子计算系统至关重要。在这封信中,我们评估了以化合物半导体(InAs)为底电极的基于 HZO 的铁电电容器(FeCAP)的低温性能。我们证明,与室温相比,通过在唤醒过程中增加电压,可在 14 K 温度下获得近乎相同的残余极化。我们在低至 50 K 的温度下研究了 FeCAP 的开关动态,并通过成核限制开关模型分析了测量数据。这些结果以及在低温条件下增强的耐久性为低温铁电带来了大好机会。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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