Etch Rate Uniformity Monitoring for Photoresist Etch Using Multi-channel Optical Emission Spectroscopy and Scanning Floating Harmonic Probe in an Inductively Coupled Plasma Reactor

IF 2.6 3区物理与天体物理 Q3 ENGINEERING, CHEMICAL

Plasma Chemistry and Plasma Processing Pub Date : 2024-08-18 DOI:10.1007/s11090-024-10498-0

Sanghun Lee, Sanghee Han, Jaehyeon Kim, Minsung Jeon, Heeyeop Chae

{"title":"Etch Rate Uniformity Monitoring for Photoresist Etch Using Multi-channel Optical Emission Spectroscopy and Scanning Floating Harmonic Probe in an Inductively Coupled Plasma Reactor","authors":"Sanghun Lee, Sanghee Han, Jaehyeon Kim, Minsung Jeon, Heeyeop Chae","doi":"10.1007/s11090-024-10498-0","DOIUrl":null,"url":null,"abstract":"<div><p>The etch rate uniformity in photoresist etching was monitored using multi-channel optical emission spectroscopy (OES) and a spatially resolved etch rate model incorporating radical and ion etching characteristics. The F radical densities at various locations were estimated using 8-channel OES and applied to a radical-spontaneous etch rate model to examine the impact of radicals on the etch rate. The ion fluxes were measured using a scanning floating harmonic probe for an ion-enhanced etch rate model to investigate the effect of ions on the etch rate. A combined etch rate model was proposed to explain the effects on both radical and ion etching characteristics, and the etch rates and etch rate uniformities predicted by the model were quantitatively compared with the measured values. The calculated R-squared score (R<sup>2</sup>) and the mean absolute percentage error (MAPE) of the etch rates predicted by the model were 0.99 and 1.3%, respectively. The etch rate uniformities predicted by the model showed good accuracy with R<sup>2</sup> of 0.99 and MAPE of 12.0% compared to the measured values, and the combined etch rate model also successfully predicted the distribution of the etch rate. This study demonstrates that multi-channel OES and the developed model can quantitatively predict the etch rate distribution of plasma etching processes.</p></div>","PeriodicalId":734,"journal":{"name":"Plasma Chemistry and Plasma Processing","volume":"44 6","pages":"2247 - 2262"},"PeriodicalIF":2.6000,"publicationDate":"2024-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Plasma Chemistry and Plasma Processing","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11090-024-10498-0","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, CHEMICAL","Score":null,"Total":0}

引用次数: 0

Abstract

The etch rate uniformity in photoresist etching was monitored using multi-channel optical emission spectroscopy (OES) and a spatially resolved etch rate model incorporating radical and ion etching characteristics. The F radical densities at various locations were estimated using 8-channel OES and applied to a radical-spontaneous etch rate model to examine the impact of radicals on the etch rate. The ion fluxes were measured using a scanning floating harmonic probe for an ion-enhanced etch rate model to investigate the effect of ions on the etch rate. A combined etch rate model was proposed to explain the effects on both radical and ion etching characteristics, and the etch rates and etch rate uniformities predicted by the model were quantitatively compared with the measured values. The calculated R-squared score (R²) and the mean absolute percentage error (MAPE) of the etch rates predicted by the model were 0.99 and 1.3%, respectively. The etch rate uniformities predicted by the model showed good accuracy with R² of 0.99 and MAPE of 12.0% compared to the measured values, and the combined etch rate model also successfully predicted the distribution of the etch rate. This study demonstrates that multi-channel OES and the developed model can quantitatively predict the etch rate distribution of plasma etching processes.

Abstract Image

查看原文本刊更多论文

在电感耦合等离子体反应器中使用多通道光学发射光谱和扫描浮动谐波探针监测光刻胶蚀刻的蚀刻速率均匀性

使用多通道光学发射光谱 (OES) 和包含自由基和离子蚀刻特征的空间分辨蚀刻速率模型监测了光刻胶蚀刻过程中的蚀刻速率均匀性。使用 8 通道 OES 估算了不同位置的 F 自由基密度，并将其应用于自由基自发蚀刻速率模型，以研究自由基对蚀刻速率的影响。使用扫描浮动谐波探针测量离子通量，建立离子增强蚀刻速率模型，研究离子对蚀刻速率的影响。提出了一个综合蚀刻速率模型来解释自由基和离子蚀刻特性的影响，并将模型预测的蚀刻速率和蚀刻速率均匀性与测量值进行了定量比较。计算得出的模型预测蚀刻率的 R 平方得分（R2）和平均绝对百分比误差（MAPE）分别为 0.99% 和 1.3%。与测量值相比，模型预测的蚀刻率均匀性显示出良好的准确性，R2 为 0.99，MAPE 为 12.0%。这项研究表明，多通道 OES 和所开发的模型可以定量预测等离子刻蚀过程的刻蚀速率分布。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Plasma Chemistry and Plasma Processing 工程技术-工程：化工

CiteScore

5.90

自引率

8.30%

发文量

审稿时长

6-12 weeks

期刊介绍： Publishing original papers on fundamental and applied research in plasma chemistry and plasma processing, the scope of this journal includes processing plasmas ranging from non-thermal plasmas to thermal plasmas, and fundamental plasma studies as well as studies of specific plasma applications. Such applications include but are not limited to plasma catalysis, environmental processing including treatment of liquids and gases, biological applications of plasmas including plasma medicine and agriculture, surface modification and deposition, powder and nanostructure synthesis, energy applications including plasma combustion and reforming, resource recovery, coupling of plasmas and electrochemistry, and plasma etching. Studies of chemical kinetics in plasmas, and the interactions of plasmas with surfaces are also solicited. It is essential that submissions include substantial consideration of the role of the plasma, for example, the relevant plasma chemistry, plasma physics or plasma–surface interactions; manuscripts that consider solely the properties of materials or substances processed using a plasma are not within the journal’s scope.