Temperature-Dependent Electrical Characteristics and Low-Frequency Noise Analysis of AlGaN/GaN HEMTs

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-08-21 DOI:10.1109/JEDS.2024.3447022

Qiang Chen;Y. Q. Chen;Chang Liu;Zhiyuan He;Yuan Chen;K. W. Geng;Y. J. He;W. Y. Chen

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Abstract

In this paper, we investigate the electrical characteristics of AlGaN/GaN HEMTs at the lowest temperature of 20 K. The measurement results indicate that the output current of the device decreases significantly with increasing temperature at temperature ranging from 40 K to 260 K, and the saturation drain current decreases by 19%. The gate leakage current rises slightly when the temperature increases. However, both the transfer and C-V characteristics indicate that the threshold voltage shift slightly in a negative direction as the temperature rises. In order to determine the physical mechanism of electrical characteristics change, the low-frequency noise (LFN) characteristics at different temperatures were measured and the density of traps was extracted. Finally, we consider that there are two competing mechanisms affecting the electrical characteristics of devices. The trap density reduction caused by temperature rise leads to threshold voltage’s negative shift, while the drop of 2DEG mobility is the main reason for the decrease of output current.

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AlGaN/GaN HEMT 随温度变化的电气特性和低频噪声分析

测量结果表明，在 40 K 至 260 K 的温度范围内，器件的输出电流随着温度的升高而显著减小，饱和漏极电流减小了 19%。温度升高时，栅极漏电流略有上升。然而，转移特性和 C-V 特性都表明，随着温度升高，阈值电压略微向负方向移动。为了确定电气特性变化的物理机制，我们测量了不同温度下的低频噪声（LFN）特性，并提取了陷阱密度。最后，我们认为有两种相互竞争的机制影响着器件的电气特性。温度升高引起的陷阱密度降低导致阈值电压负移，而二维电子元件迁移率下降则是输出电流降低的主要原因。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.