Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-09-06 DOI:10.1109/JEDS.2024.3455256

Boseong Son;Huijin Kim;Young-Woong Lee;Purusottam Reddy Bommireddy;Si-Hyun Park

引用次数: 0

Abstract

We developed a monolithically integrated device consisting of a single GaN LED and two p-GaN-depletion MOSFETs on a GaN LED epitaxial layer. The p-GaN-depletion MOSFETs exhibited a subthreshold slope of 1 V/decade and a threshold voltage of –2 V, whereas the LED exhibited a forward voltage of 3.5 V at 1 mA and an electroluminescence peak of 445 nm. The device could be controlled by the scan voltage, with

$V_{DD}$

ranging from 1 to 2 V, and cut off the total current with an applied scan voltage greater than 3 V. This work represents an important step towards the monolithic integration of LED and transistors for use in active-matrix micro-LED displays.

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晶圆级单片集成 LED 与 GaN LED 外延层上的 p-GaN 损耗 MOSFET

我们开发了一种单片集成器件，包括一个氮化镓发光二极管和两个位于氮化镓发光二极管外延层上的p-氮化镓损耗MOSFET。对氮化镓损耗 MOSFET 的阈下斜率为 1 V/decade，阈值电压为 -2 V，而 LED 在 1 mA 电流下的正向电压为 3.5 V，电致发光峰值为 445 nm。该器件可由扫描电压控制，$V_{DD}$范围为 1 至 2 V，并可在扫描电压大于 3 V 时切断总电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.