Research of Single-Event Burnout in P-NiO/n-Ga2O3 Heterojunction Diode

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-09-09 DOI:10.1109/TDMR.2024.3456095

Cheng-Hao Yu;Hui Yang;Wen-Sheng Zhao;Da-Wei Wang;Hao-Min Guo;Yue Hu;Xiao-Dong Wu;Xin Tan

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引用次数: 0

Abstract

This paper presents the 2-D numerical simulation results of the ion-induced single-event burnout (SEB) in the conventional gallium-oxide (Ga2O3) Schottky barrier diode (SBD), conventional Ga2O3 heterojunction diode (HJD), and Ga2O3 HJD with a p-NiO junction termination extension (JTE) and a small-angle beveled field plate (BFP). The employed simulation physics models and material parameters are validated by the reverse I-V characteristics in experiments. The simulation results of SEB failure mechanism and threshold voltage in the conventional Ga2O3 SBD are proved by the chlorine (Cl) ion irradiation tests. The most sensitive position and the ion range influence to induce an SEB are discussed. Then, the SEB failure mechanism and threshold voltage of conventional Ga2O3 HJD are comparatively investigated based on the Cl ion strike. Although, the conventional HJD presents much better SEB performance than conventional SBD in anode position, the anode edge of HJD is proved to be very sensitive to an ion. Therefore, the Ga2O3 HJD with JTE and BFP, which can significantly suppress the peak electric field strength at the anode edge, is investigated that has better SEB performance than the conventional SBD and HJD under different ion species.

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P-NiO/n-Ga2O3 异质结二极管中的单次烧毁研究

本文给出了传统氧化镓（Ga2O3）肖特基势垒二极管（SBD）、传统Ga2O3异质结二极管（HJD）和带p-NiO结端端延伸（JTE）和小角度斜场板（BFP）的Ga2O3肖特基势垒二极管（SBD）离子诱导单事件烧蚀（SEB）的二维数值模拟结果。实验结果表明，所采用的模拟物理模型和材料参数得到了反I-V特性的验证。通过氯离子辐照试验，验证了传统Ga2O3 SBD中SEB失效机理和阈值电压的模拟结果。讨论了最敏感位置和离子范围对诱导SEB的影响。然后，对比研究了基于Cl离子冲击的传统Ga2O3 HJD的SEB失效机理和阈值电压。虽然在阳极位置，传统的HJD比传统的SBD具有更好的SEB性能，但HJD的阳极边缘对离子非常敏感。因此，采用JTE和BFP制备的Ga2O3 HJD在不同离子种类下具有比传统SBD和HJD更好的SEB性能，可以显著抑制阳极边缘的峰值电场强度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.