Oxygen-Atom Incorporated Ferroelectric AlScN Capacitors for Multi-Level Operation

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-09-02 DOI:10.1109/LED.2024.3453111

Si-Meng Chen;Hirofumi Nishida;Sung-Lin Tsai;Takuya Hoshii;Kazuo Tsutsui;Hitoshi Wakabayashi;Edward Yi Chang;Kuniyuki Kakushima

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引用次数: 0

Abstract

The effect of oxygen-atom incorporation in 50-nm-thick ferroelectric Al0.89Sc0.11N films was investigated. The fabricated films exhibited a high remanent polarization (

${P}_{\text {r}})$

exceeding

$100~\mu $

C/cm2, irrespective of the oxygen content studied. An increase in oxygen content led to a decrease in coercive field (

${E}_{\text {c}})$

from 5.2 to 4.4 MV/cm and an increase in the static dielectric constant (

$\varepsilon _{\text {i}})$

from 15 to 19. This was likely due to the formation of substitute O and Al vacancy complex defects to ease N-atom displacement. Additionally, higher oxygen content resulted in imprint effect elimination, leakage current reduction, and breakdown field (

${E}_{\text {BD}})$

enhancement, which are beneficial for ferroelectric memory applications. The gentle and linear relationship between

${P}_{\text {r}}$

and the electric field (

${E})$

enabled precise control of partial polarization switching, supporting multi-level operation. Although issues related to fatigue and endurance cycles remain to be addressed, the high

${P}_{\text {r}}$

and potential for multi-level operation are suitable for crossbar-based analog in-memory computing.

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用于多电平运行的氧原子掺杂铁电 AIScN 电容器

研究了在 50 纳米厚的铁电 Al0.89Sc0.11N 薄膜中加入氧原子的影响。所制备的薄膜表现出很高的剩电位极化（{P}_{\text {r}}）$，超过 $100~\mu $ C/cm2，与所研究的氧含量无关。氧含量的增加导致矫顽力场（{E}_{text {c}）$ 从 5.2 MV/cm 降至 4.4 MV/cm，静态介电常数（{varepsilon _{\text {i}}）$ 从 15 增至 19。这可能是由于形成了替代的 O 和 Al 空位复合缺陷，从而缓解了 N 原子的位移。此外，较高的氧含量还消除了印记效应，降低了漏电流，增强了击穿场（${E}_\text {BD}}），这些都有利于铁电存储器的应用。{P}_{text{r}$与电场（{E}）$之间平缓的线性关系实现了对部分极化切换的精确控制，支持多级操作。虽然与疲劳和耐久周期相关的问题仍有待解决，但高{P}_{text {r}}$ 和多级运行潜力适合于基于交叉条的模拟内存计算。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.