Exceptional Immunity of Drain-Induced Barrier Lowering Effect in a-IGZTO Transistors via Favorable Coupling Effects of Metal-H Bonding

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-08-27 DOI:10.1109/LED.2024.3450659

Gwang-Bok Kim;Se Eun Kim;Yena Kim;Kyeong-Seok Son;Joon Seok Park;Sunhee Lee;Jae Kyeong Jeong

引用次数: 0

Abstract

This study shows the beneficial coupling effects of Sn-induced metal-H (M-H) bonding on the drain-induced barrier lowering (DIBL) of amorphous In-Ga-Zn-Sn-O (a-IGZTO) thin-film transistors (TFTs) with short channel length. The a-IGZTO TFTs had a small DIBL factor of 52 mV/V as well as outstanding performance with a high field-effect mobility of 76.9 cm2/Vs, a steep subthreshold swing of 128 mV/decade, and a threshold voltage of 0.05 V. In addition, highly stable behavior against positive gate bias temperature and negative bias illumination temperature stress was observed for a-IGZTO TFTs. This could be attributed to favorable coupling effects of Sn-induced M-H bonding and the formation of a synergistic percolation pathway by In3+ and Sn4+.

查看原文本刊更多论文

通过金属-H 键合的有利耦合效应实现 a-IGZTO 晶体管对漏极诱导的势垒降低效应的超常免疫力

这项研究显示了锡诱导的金属-H（M-H）键对具有短沟道长度的非晶 In-Ga-Zn-Sn-O (a-IGZTO) 薄膜晶体管（TFT）的漏极诱导势垒降低（DIBL）的有利耦合效应。a-IGZTO TFT 的 DIBL 系数很小（52 mV/V），而且性能卓越，具有 76.9 cm2/Vs 的高场效应迁移率、128 mV/decade 的陡峭亚阈值摆幅和 0.05 V 的阈值电压。这可能归因于锡诱导的 M-H 键的有利耦合效应以及 In3+ 和 Sn4+ 形成的协同渗流途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.