SOI Lateral Hall Device With Deep Trench Fingers for High Sensitivity and Low Offset

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-08-27 DOI:10.1109/LED.2024.3449972

Guiqiang Zheng;Jie Ma;Yichen Li;Nannan Cheng;Qingyin Zhong;Lanlan Yang;Nailong He;Dejin Wang;Sen Zhang;Yongjia Li;Long Zhang;Siyang Liu;Weifeng Sun

引用次数: 0

Abstract

In this letter, a novel silicon-on-insulator (SOI) lateral Hall device (LHD) with deep trench fingers (DTFs) is proposed. The DTFs in magnetic-sensitive well mitigate the short-circuit effect and make current-related sensitivity (S

$_{\text {I}}\text {)}$

insensitive to the signal electrode size. The SI of the proposed LHD is over 1000V/AT, the input resistance (R

$_{\text {in}}\text {)}$

is around 40.5k

$\Omega $

and offset is lower than 2.5mV. With four-phase spinning current method, the residual offset is reduced to

$17~\mu $

V and the proposed LHD has high linearity output at a magnetic field from 10mT to 300mT. In addition, the proposed LHD presents high stability across temperature ranging from 25°C to 225°C.

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具有深沟指针的 SOI 侧向霍尔器件，可实现高灵敏度和低偏移

在这封信中，我们提出了一种带有深沟指（DTF）的新型硅绝缘体（SOI）横向霍尔器件（LHD）。磁敏阱中的 DTFs 可减轻短路效应，并使电流相关灵敏度（S $_{\text {I}}\text {）}$ 对信号电极尺寸不敏感。拟议 LHD 的 SI 超过 1000V/AT，输入电阻（R $_{\text {in}}\text {）}$ 约为 40.5k $\Omega $，偏移低于 2.5mV。使用四相旋转电流方法，残余偏移量降低到 $17~\mu $ V，并且所提议的 LHD 在 10mT 到 300mT 的磁场中具有高线性度输出。此外，拟议的 LHD 在 25°C 至 225°C 的温度范围内具有很高的稳定性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.