Low-Frequency Noise Characteristics of Recessed Channel Ferroelectric Field-Effect Transistors

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-09-02 DOI:10.1109/LED.2024.3452776

Been Kwak;Jangsaeng Kim;Kitae Lee;Wonjun Shin;Daewoong Kwon

{"title":"Low-Frequency Noise Characteristics of Recessed Channel Ferroelectric Field-Effect Transistors","authors":"Been Kwak;Jangsaeng Kim;Kitae Lee;Wonjun Shin;Daewoong Kwon","doi":"10.1109/LED.2024.3452776","DOIUrl":null,"url":null,"abstract":"This study investigates low-frequency noise (LFN) and random telegraph noise (RTN) characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors with recessed channels (R-FeFETs) from a reliability analysis perspective. As the delay time increases after the program (PGM), the threshold voltage (\n<inline-formula> <tex-math>${V}_{\\text {TH}}\\text {)}$ </tex-math></inline-formula>\n is shifted by trapped electron detrapping and does not saturate. From LFN measurement, it is revealed that the origin of 1/f noise in the R-FeFETs is carrier number fluctuation. RTN is also observed with a distinct corner frequency (\n<inline-formula> <tex-math>${f}_{\\text {c}}~\\approx ~480$ </tex-math></inline-formula>\n Hz). It is confirmed that the trap is distributed locally at the DE/FE interface (z \n<inline-formula> <tex-math>$\\approx ~1.5$ </tex-math></inline-formula>\n nm) due to the structural specificity of R-FeFETs, resulting in RTN. The results of this work provide valuable insight for understanding the reliability issue of R-FeFETs.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2118-2121"},"PeriodicalIF":4.1000,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10662904/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This study investigates low-frequency noise (LFN) and random telegraph noise (RTN) characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors with recessed channels (R-FeFETs) from a reliability analysis perspective. As the delay time increases after the program (PGM), the threshold voltage (

${V}_{\text {TH}}\text {)}$

is shifted by trapped electron detrapping and does not saturate. From LFN measurement, it is revealed that the origin of 1/f noise in the R-FeFETs is carrier number fluctuation. RTN is also observed with a distinct corner frequency (

${f}_{\text {c}}~\approx ~480$

Hz). It is confirmed that the trap is distributed locally at the DE/FE interface (z

$\approx ~1.5$

nm) due to the structural specificity of R-FeFETs, resulting in RTN. The results of this work provide valuable insight for understanding the reliability issue of R-FeFETs.

查看原文本刊更多论文

嵌入式沟道铁电场效应晶体管的低频噪声特性

本研究从可靠性分析的角度研究了具有凹槽的氧化铪-氧化锆（HZO）铁电场效应晶体管（R-FeFET）的低频噪声（LFN）和随机电报噪声（RTN）特性。随着编程（PGM）后延迟时间的增加，阈值电压（${V}_{text {TH}\text {）}$会因电子脱困而发生偏移，并且不会达到饱和。通过 LFN 测量发现，R-FeFET 中 1/f 噪声的起源是载流子数量波动。同时还观察到 RTN 有一个明显的角频率（${f}_{text {c}}~approx ~480$ Hz）。研究证实，由于 R-FeFET 结构的特殊性，陷阱局部分布在 DE/FE 界面（z $\approx ~1.5$ nm），从而导致了 RTN。这项工作的结果为理解 R-FeFET 的可靠性问题提供了宝贵的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.