Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors via In-Situ SiNx Passivation

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Zhuoya Peng;Mian Wu;Zesheng Lv;Shouqiang Yang;Mengyao Song;Yv Yin;Hao Jiang
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引用次数: 0

Abstract

AlGaN-based heterojunction field-effect phototransistors featuring high gain and high speed often suffer from serious persistent photoconductivity (PPC). The PPC effect leads to long-term recovery after signal excitation, which not only restricts response speed but also affects the stability and reliability of photoresponse. Herein, in-situ SiNx passivation was used to mitigate the PPC effect in solar-blind AlGaN heterojunction field-effect phototransistors. By the passivation, the decay time constant decreases from 0.79 s and 0.30 s associated with two trap levels to 0.18 s associated with one trap level. Moreover, the response current under periodic weak illumination is significantly stabilized. The device dark current is also reduced by more than one order of magnitude, alongside remarkably improved on-chip uniformity. These improvements are attributed to the reduction of deep acceptor defects on the AlGaN surface by the in-situ SiNx passivation.
通过原位氧化硅有效缓解 AlGaN 太阳能盲场效应光电晶体管中的持续光电导现象
基于氮化铝的异质结场效应光电晶体管具有高增益和高速度的特点,但往往存在严重的持续光电导效应(PPC)。PPC 效应会导致信号激发后的长期恢复,这不仅限制了响应速度,还会影响光响应的稳定性和可靠性。本文采用原位氮化硅钝化技术来减轻日光盲氮化铝镓异质结场效应光电晶体管中的 PPC 效应。通过钝化,衰减时间常数从两个陷阱水平的 0.79 秒和 0.30 秒下降到一个陷阱水平的 0.18 秒。此外,周期性弱光照下的响应电流也大大稳定。器件暗电流也降低了一个数量级以上,同时片上均匀性也显著改善。这些改进归功于原位 SiNx 钝化减少了 AlGaN 表面的深层受体缺陷。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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