Achieving High Yield of Perpendicular SOT-MTJ Manufactured on 300 mm Wafers

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-09-04 DOI:10.1109/LED.2024.3454609

Wenlong Yang;Zhenghui Ji;Yang Gao;Kaiyuan Zhou;Qijun Guo;Dinggui Zeng;Shasha Wang;Ming Wang;Lijie Shen;Guilin Chen;Yihui Sun;Enlong Liu;Shikun He

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引用次数: 0

Abstract

The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the next generation of MRAM technology. To achieve high yield and consistent device performance in MTJs with perpendicular magnetic anisotropy, an integration flow has been developed that incorporates special MTJ etching technique and other CMOS-compatible processes on a 300 mm wafer manufacturing platform. Systematic studies have been conducted on device performance and statistical uniformity, encompassing magnetic properties, electrical switching behavior, and reliability. Achievements include a switching current of

$680~\mu $

A at 2 ns, a TMR as high as 119%, ultra-high endurance (over

$10^{{12}}$

cycles), and excellent uniformity in the fabricated SOT-MTJ devices, with a yield of up to 99.6%. The proposed integration process, featuring high yield, is anticipated to streamline the mass production of SOT-MRAM.

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实现在 300 毫米晶圆上制造垂直 SOT-MTJ 的高产量

大规模制造高产量的三端磁隧道结（MTJ）正变得越来越重要，特别是随着自旋轨道力矩（SOT）磁性随机存取存储器（MRAM）作为下一代 MRAM 技术受到越来越多的关注。为了在具有垂直磁各向异性的 MTJ 中实现高产量和稳定的器件性能，我们在 300 毫米晶圆制造平台上开发了一种集成流程，其中集成了特殊的 MTJ 刻蚀技术和其他 CMOS 兼容工艺。对器件性能和统计均匀性进行了系统研究，包括磁性能、电气开关行为和可靠性。所取得的成果包括：2 ns 时的开关电流为 680~\mu $ A、TMR 高达 119%、超高耐用性（超过 10^{{12}}$ 周期），以及所制造的 SOT-MTJ 器件具有出色的均匀性，良品率高达 99.6%。所提出的集成工艺具有高良率的特点，有望简化 SOT-MRAM 的大规模生产。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.