4H-SiC Lateral Magnetotransistor With Sub-Microtesla In-Plane Magnetic Field Detectivity

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-09-09 DOI:10.1109/LED.2024.3456752

Hesham Okeil;Gerhard Wachutka

引用次数: 0

Abstract

In this letter, we report on the first 4H-SiC based lateral magnetotransistor. The sensor is fabricated in a 4H-SiC wafer scale Bipolar-CMOS-DMOS (BCD) technology and exhibits high sensitivity to in-plane magnetic fields, reaching

$960 \; \mu $

A/T. We study its electrical and magnetic characteristics and measure the achievable magnetic field detectivity. A minimum noise-limited detectivity of 273 nT/

$\sqrt {\text {Hz}}$

is achieved. Using TCAD simulations, we study the underlying transduction mechanism and identify electron hole plasma modulation as the main operating principle.

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具有亚微特斯拉平面内磁场探测能力的 4H-SiC 侧面磁晶体管

在这封信中，我们报告了首个基于 4H-SiC 的横向磁晶体管。该传感器采用 4H-SiC 晶圆级双极-CMOS-DMOS (BCD) 技术制造，对平面磁场的灵敏度很高，达到了 960 \; \mu $ A/T。我们研究了它的电学和磁学特性，并测量了可实现的磁场检测率。最小噪声限制检测率为 273 nT/ $\sqrt {\text {Hz}}$。通过 TCAD 仿真，我们研究了底层传导机制，并确定电子空穴等离子体调制是其主要工作原理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.