Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-09-06 DOI:10.1109/LED.2024.3455372

Jia Cheng Li;Ying Chen Li;Zi Chun Liu;Yuan Xiao Ma;Ye Liang Wang

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引用次数: 0

Abstract

Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on Cs0.05(MA0.17FA

$_{{0}.{83}}\text {)}_{{0}.{95}}$

Pb(I0.83Br

$_{{0}.{17}}\text {)}_{{3}}$

perovskite film are presented with a high rectification ratio around 514 and an on/off ratio of 1362. The device can continuously operate for

$10^{{4}}$

cycles and the retention time is over

$10^{{4}}$

seconds at

$85~^{\circ }$

C. In-depth mechanistic analysis reveals that the resistive-switching behavior originates from the migration of iodide ions, which is accompanied by a high rectification ratio produced by the high barrier at the interface between Au and Cs0.05(MA0.17FA

$_{{0}.{83}}\text {)}_{{0}.{95}}$

Pb(I0.83Br

$_{{0}.{17}}\text {)}_{{3}}$

. The maximum effective array size based on the perovskite memristor is up to 1747 with a read margin (RM) of 10%. We believe that this work can pave a way for the development of perovskites thin films in high-density memristive arrays.

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基于 CsMAFAPbIBr 包晶石的自整流电阻开关特性

在不提高集成复杂度的情况下，自整流忆阻器抑制了交叉条中的潜行电流，因而备受关注。在这项研究中，基于 Cs0.05(MA0.17FA $_{{0}.{83}\text {)}_{{0}.{95}}$ Pb(I0.83Br $_{{0}.{17}}text\ {)}_{{3}}$ 包晶薄膜的忆阻器具有约 514 的高整流比和 1362 的开/关比。该器件可连续工作 10^{{4}}$ 个周期，在 85~^{\circ }$ C 下的保持时间超过 10^{{4}}$ 秒。深入的机理分析表明，电阻开关行为源于碘离子的迁移，伴随着金与 Cs0.05(MA0.17FA $_{{0}.{83}\text {)}_{{0}.{95}}$ Pb(I0.83Br $_{{0}.{17}}\text {)}_{{3}}$ 之间界面的高阻抗所产生的高整流比。基于包晶体忆阻器的最大有效阵列尺寸可达 1747，读取余量（RM）为 10%。我们相信，这项工作能为开发高密度忆阻器阵列中的过氧化物薄膜铺平道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.