A Low-Dropout Regulator Integrated With E-mode IGZO and D-mode ITO/IGZO Dual Layer Thin Film Transistors With Superior Uniformity and Stability

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-09-10 DOI:10.1109/LED.2024.3456861

Zuoxu Yu;Fan Yu;Yubo Li;Tingrui Huang;Yuzhen Zhang;Wenting Xu;Wangran Wu;Weifeng Sun

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引用次数: 0

Abstract

In this work, an oxide-semiconductor-based low dropout regulator (LDO) circuit with enhancement- (E-) and depletion-mode (D-mode) thin film transistors (TFTs) is demonstrated. The E-mode TFTs adopt IGZO as the active layer. The D-mode TFTs are achieved via the ITO/IGZO dual-layer channel with high field effect mobility of 32.7 cm2V−1s−1 and superior uniformity and stability. Its threshold voltage (Vth) generates a positive shift of only 0.22V after positive bias stress. Besides, the D-mode TFTs own a low temperature coefficient of −4.9 mV/°C for Vth, facilitating the design of voltage reference. Benefiting from the remarkable D-mode TFTs, the LDO shows excellent performance, including a line regulation of 0.2%/V, a low quiescent current of

$7~\mu $

A, and a load regulation of

$180~\mu $

$\mu $

A. It has a high power supply rejection ratio (PSRR) of up to 45 dB and a unit gain bandwidth of over 100 kHz.

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一种集成了 E 模式 IGZO 和 D 模式 ITO/IGZO 双层薄膜晶体管的低压差稳压器，具有卓越的均匀性和稳定性

这项研究展示了一种基于氧化物半导体的低压差稳压器（LDO）电路，该电路采用了增强型（E-）和耗尽型（D-）薄膜晶体管（TFT）。E 模式 TFT 采用 IGZO 作为有源层。D 模式 TFT 是通过 ITO/IGZO 双层沟道实现的，具有 32.7 cm2V-1s-1 的高场效应迁移率和出色的均匀性和稳定性。其阈值电压（Vth）在正偏压应力后仅产生 0.22V 的正偏移。此外，D-模式 TFT 的 Vth 温度系数低至 -4.9 mV/°C，这为电压基准的设计提供了便利。得益于出色的 D-mode TFT，该 LDO 表现出了卓越的性能，包括 0.2%/V 的线路调节、7~mu $ A 的低静态电流和 180~mu $ V/ $mu $ A 的负载调节，以及高达 45 dB 的电源抑制比 (PSRR) 和超过 100 kHz 的单位增益带宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.