A 4H-SiC NMOSFET-Based Temperature Sensor Operating Between 14K and 481 K

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-09-12 DOI:10.1109/LED.2024.3459049

Nicola Rinaldi;Alexander May;Mathias Rommel;Rosalba Liguori;Alfredo Rubino;Gian Domenico Licciardo;Luigi Di Benedetto

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引用次数: 0

Abstract

The experimental characteristics of a temperature sensor based on a 4H-SiC diode-connected lateral NMOSFET are shown in the range between 14K and 481K. The device is fully compatible with 4H-SiC CMOS technology. The analysis of the sensor characteristics reveals a main temperature dependence on the threshold voltage compared to the channel mobility. Due to the oxide/semiconductor interface traps, the sensor characteristic is divided in three temperature ranges to obtain a good linearity: in 14K

$\leq $

$\leq 200$

K, the sensitivity is 53.46mV/K, the rms error is 5.49K and the coefficient of determination is 0.9927 for a bias current of

$1.59\mu $

A; instead, a current of

$100\mu $

A permits to have a maximum coefficient of determination of 0.9708 with a sensitivity of 29.9mV/K for 200K < T

$\leq 394$

K, and a linearity of 0.9926 with a sensitivity of 13.72mV/K at T >394K. Finally, for currents between 870nA and

$9\mu $

A the linearity is higher than 0.95 in all temperature ranges.

查看原文本刊更多论文

基于 4H-SiC NMOSFET 的温度传感器，工作温度范围为 14K 至 481K

基于 4H-SiC 二极管连接横向 NMOSFET 的温度传感器在 14K 至 481K 范围内的实验特性如图所示。该器件与 4H-SiC CMOS 技术完全兼容。对传感器特性的分析表明，与沟道迁移率相比，阈值电压主要取决于温度。由于氧化物/半导体界面阱，传感器特性分为三个温度范围，以获得良好的线性：在 14K $\leq $ T $\leq 200$ K 时，灵敏度为 53.46mV/K，均方根误差为 5.49K，确定系数为 0.当偏置电流为 1.59mu $ A 时，测定系数为 0.9708，灵敏度为 29.9mV/K；当偏置电流为 100mu $ A 时，测定系数为 0.9926，灵敏度为 13.72mV/K。最后，当电流在 870nA 和 9$\mu $ A 之间时，线性度在所有温度范围内都高于 0.95。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.