Direct Emissions Reduction in Plasma Dry Etching Using Alternate Chemistries: Opportunities, Challenges, and Need for Collaboration

IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Gurpreet S. Lugani;Robert Skaggs;Bryan Morris;Tyler Tolman;Douglas Tervo;Stefan Uhlenbrock;Jon Hacker;Chye Seng Tan;James P. Nehlsen;Robert G. Ridgeway;Lois Wong Broadway;Francis P. Rudy
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Abstract

Plasma Dry-Etch (DE) is one of the key unit-operations in semiconductor manufacturing that use greenhouse gases (GHG) as feed gas (Donnelly and Kornblit, 2013). The exhaust GHG emission reduction or mitigation is one of the main focuses of scope 1 emission reduction at Micron Technology Inc. The reduction and mitigation approaches have been strategized in focus-tiers in order of proximity to the source of emissions. The focus-tiers upstream of exhaust are avoidance, replacement, reduction and downstream of exhaust are recovery/capture/recycle, abatement. This paper focuses on the replacement focus-tier that pertains to replacing high-emission feed gases (HE gas, feedgas that will produce relatively high kgCO2e through exhaust) with relatively low-emission feed gases (LE gas, feedgas that will produce relatively low kgCO2e through exhaust). The paper presents replacement opportunities and challenges through an evaluation study of Carbonyl Floride (COF2) as a replacement gas for NF3 or CF4 as a DE in-situ plasma chamber cleans gas. In conclusion, direct emissions from DE chamber cleans can be lowered by replacing NF3 and CF4 GHGs with COF2 by 90% or more. However, this replacement would require additional safety measures and abatement in operations due to increased toxicity and reactivity of COF2, along with cost roadmap to make its adoption economically feasible. Similar and possibly additional challenges would arise with other replacement options. To overcome challenges in replacement strategy focus-tier, it will require strong industry level collaboration between chemical suppliers, original equipment manufacturers (OEMs), device manufacturers, semiconductor research and collaboration centers and university research groups.
使用替代化学剂直接减少等离子干蚀刻中的排放:机遇、挑战与合作需求
等离子干蚀(DE)是半导体制造中使用温室气体(GHG)作为原料气体的关键单元操作之一(Donnelly 和 Kornblit,2013 年)。废气温室气体减排或缓解是美光科技公司范围 1 减排的重点之一。减少和缓解方法已按照接近排放源的顺序,在重点层中进行了战略规划。排气上游的重点层为避免、替代、减少,排气下游的重点层为回收/捕获/再循环、减排。本文的重点是替换重点层,即用相对低排放的原料气体(LE 气体,通过排气产生相对较低 kgCO2e 的原料气体)替换高排放的原料气体(HE 气体,通过排气产生相对较高 kgCO2e 的原料气体)。本文通过对羰基氟化物(COF2)作为 NF3 或 CF4 的替代气体作为 DE 原位等离子体室清洁气体的评估研究,介绍了替代机会和挑战。总之,用 COF2 替代 NF3 和 CF4 温室气体,可将 DE 室清洗产生的直接排放降低 90% 或更多。然而,由于 COF2 的毒性和反应性增加,这种替代品需要在操作中采取额外的安全措施和减排措施,同时还需要制定成本路线图,使其在经济上可行。其他替代方案也会面临类似的挑战,甚至更多挑战。要克服替代战略重点层中的挑战,需要化学品供应商、原始设备制造商 (OEM)、设备制造商、半导体研究与合作中心以及大学研究小组之间在行业层面上开展强有力的合作。
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来源期刊
IEEE Transactions on Semiconductor Manufacturing
IEEE Transactions on Semiconductor Manufacturing 工程技术-工程:电子与电气
CiteScore
5.20
自引率
11.10%
发文量
101
审稿时长
3.3 months
期刊介绍: The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.
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