Comparative Study of Nondestructive Mapping of Conformal-Coating Thickness on Microelectronics by Terahertz Time-of-Flight Tomography

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2024-08-22 DOI:10.1109/TSM.2024.3447892

Min Zhai;Serena Calvelli;Haolian Shi;Marco Ricci;Stefano Laureti;Prabjit Singh;Haley Fu;Alexandre Locquet;D. S. Citrin

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Abstract

Conformal coatings are used to protect microelectronic circuitry and increasingly optoelectronics and photonics from detrimental effects of the environment, such as moisture, dust, gasses, and mechanical abrasion. The conventional approach to determine the mean time to failure of conformally coated microelectronic components is usually labor-intensive and time-consuming. We recently showed (Shi et al., 2024) that the quasi-optical approach terahertz (THz) time-of-flight tomography (TOFT) could in principle be used to map conformal-coating thickness over a sample of dimensions on the scale of square centimeters. In this study, we employ THz TOFT to characterize several conformal-coating types on microelectronic test samples in a nondestructive and noncontact manner. This study extends previous work on acrylic conformal coatings. THz TOFT is shown to be effective in the thickness characterization of silicone and acrylic conformal coatings, but not nanometric atomic-layer-deposition metal-oxide coating, which is too thin for the technique.

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利用太赫兹飞行时间断层扫描对微电子共形涂层厚度进行无损测绘的比较研究

保形涂料用于保护微电子电路，并越来越多地用于保护光电子和光电元件免受潮湿、灰尘、气体和机械磨损等环境的有害影响。测定保形涂层微电子元件平均失效时间的传统方法通常耗费大量人力和时间。我们最近的研究（Shi 等人，2024 年）表明，准光学方法太赫兹（THz）飞行时间断层扫描（TOFT）原则上可用于绘制尺寸为平方厘米的样品的保形涂层厚度图。在本研究中，我们采用太赫兹飞行时间断层扫描技术，以无损和非接触的方式对微电子测试样品上的几种保形涂层类型进行了表征。这项研究扩展了之前关于丙烯酸保形涂层的工作。研究表明，太赫兹 TOFT 能有效表征硅胶和丙烯酸保形涂层的厚度，但不能表征纳米原子层沉积金属氧化物涂层，因为这种涂层对该技术来说太薄。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Semiconductor Manufacturing 工程技术-工程：电子与电气

CiteScore

5.20

自引率

11.10%

发文量

101

审稿时长

3.3 months

期刊介绍： The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.