Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-09-12 DOI:10.1109/TED.2024.3450436

Zhi Jiang;Enpu Wang;Jun Ying;Chengchang Zhang;Jiajia Du;Guangyu Wang;Yu Pang

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引用次数: 0

Abstract

Diamond-on-Si insulated gate bipolar transistors (IGBTs) on a floating zone (FZ) silicon wafer is fabricated and investigated. The polycrystalline diamond (PCD) of the Diamond-on-Si IGBT is used for a heat spreader of high-power devices, which helps to raise the breakdown voltage and short time at the on-state so as to cool down temperature in the N-drift region in IGBT operating and reduce the turn-off power. Moreover, the Diamond-on-Si IGBT could improve more current extremely, and nano diamond particles (NDs) grain size near the interface Si/Diamond that led to a higher in-plane thermal dissipation compared with the conventional IGBT. By fine control of the seed size and areal density, thermal conductivity near multihole collector contacts region can therefore be improved. Measurement results of diamond of

$140~\mu $

m IGBT show that under turn-off loss (

${E}_{\text {off}}$

) of 1.24 mJ/cm ² , breakdown voltage (

${V}_{\text {BR}}$

) of 1.32 kV and collector-emitter current (

${I}_{\text {ce}}$

) is as high as 150 A/cm ² , which is superior to most of conventional IGBTs. In addition, the reasons for the Diamond-on-Si IGBTs results are also discussed in this article. Finally, the advantages of Diamond-on-Si IGBTs in terms of thermal performances are verified by measurement, and this article also provides a guideline for the process of Diamond IGBTs by the liquid Ga catalysis.

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具有超高击穿电压和导通电流的硅基金刚石 IGBT

在浮动区（FZ）硅晶片上制造并研究了硅基金刚石绝缘栅双极晶体管（IGBT）。硅基金刚石 IGBT 的多晶金刚石 (PCD) 可用作大功率器件的散热器，有助于提高击穿电压和缩短导通时间，从而冷却 IGBT 工作时 N 漂移区的温度并降低关断功率。此外，与传统的 IGBT 相比，硅基金刚石 IGBT 还能改善更大的电流极限，以及硅/金刚石界面附近的纳米金刚石颗粒（NDs）粒度，从而实现更高的面内热耗散。因此，通过精细控制金刚石颗粒的粒度和密度，可以改善多孔集电极触点区域附近的热导率。对 140~\mu $ m 的金刚石 IGBT 的测量结果表明，在关断损耗（${E}_{text {off}}$ ）为 1.24 mJ/cm2 的条件下，击穿电压（${V}_{text {BR}}$ ）为 1.32 kV，集电极-发射极电流（${I}_{text {ce}}$ ）高达 150 A/cm2 ，优于大多数传统 IGBT。此外，本文还讨论了硅基金刚石 IGBT 出现这种结果的原因。最后，通过测量验证了硅基金刚石 IGBT 在热性能方面的优势，本文还为利用液态镓催化技术生产金刚石 IGBT 的工艺提供了指导。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.