Radiation hardened P-Quatro 12T SRAM cell with strong SEU tolerance for aerospace applications

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
{"title":"Radiation hardened P-Quatro 12T SRAM cell with strong SEU tolerance for aerospace applications","authors":"","doi":"10.1016/j.microrel.2024.115497","DOIUrl":null,"url":null,"abstract":"<div><p>The aerospace environment contains extremely energetic particles that trigger single-event transients (SET), leading to single-event upsets (SEU) in the memory cell. An efficient SRAM cell must be designed to tolerate soft error to withstand the extreme environment. This paper proposes a highly efficient radiation hardened-by-design 12T P-Quatro SRAM cell based on a polarity upset mechanism. The proposed cell has better writability, and WSNM is 1.08<span><math><mo>×</mo></math></span> higher than its counterpart We-Quatro SRAM cell. The read access time of the proposed SRAM cell is 0.96<span><math><mo>×</mo></math></span>, 0.91<span><math><mo>×</mo></math></span>, 0.99<span><math><mo>×</mo></math></span>, 0.98<span><math><mo>×</mo></math></span> smaller than 6T, Quatro, We-Quatro, and NQuatro SRAM cells, and 1.01<span><math><mo>×</mo></math></span> higher than RHD12T cell, and the write delay of the proposed SRAM is 0.93<span><math><mo>×</mo></math></span>, 0.46<span><math><mo>×</mo></math></span>, 0.72<span><math><mo>×</mo></math></span>, 0.41<span><math><mo>×</mo></math></span>, 0.47<span><math><mo>×</mo></math></span>, less than that of 6T, Quatro, We-Quatro, RHD12T, and NQuatro respectively. 2000 Monte Carlo simulation for power dissipation and upset margin reveals that the process variation has less impact on the proposed SRAM and 1.64<span><math><mo>×</mo></math></span> better tolerance against logic flipping. Further, for the P-Quatro, the critical charge is 41.51 fC and is 2.05<span><math><mo>×</mo></math></span>, 1.75<span><math><mo>×</mo></math></span>, 1.93<span><math><mo>×</mo></math></span>, and 1.48<span><math><mo>×</mo></math></span> greater than Quatro, We-Quatro, RHD12T, and NQuatro memory cells. We conducted an assessment using an electrical quality matrix (EQM) that takes into account all performance parameters. The findings reveal that the EQM of the proposed cell surpasses that of the 6T, Quatro, We-Quatro, RHD12T, and NQuatro SRAM cells by factors of 0.82<span><math><mo>×</mo></math></span>, 0.35<span><math><mo>×</mo></math></span>, 0.49<span><math><mo>×</mo></math></span>, 0.71<span><math><mo>×</mo></math></span>, and 0.21<span><math><mo>×</mo></math></span>, respectively. This indicates that the proposed cell demonstrates superior electrical quality across various metrics compared to the other SRAM cell designs evaluated.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6000,"publicationDate":"2024-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S002627142400177X","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

The aerospace environment contains extremely energetic particles that trigger single-event transients (SET), leading to single-event upsets (SEU) in the memory cell. An efficient SRAM cell must be designed to tolerate soft error to withstand the extreme environment. This paper proposes a highly efficient radiation hardened-by-design 12T P-Quatro SRAM cell based on a polarity upset mechanism. The proposed cell has better writability, and WSNM is 1.08× higher than its counterpart We-Quatro SRAM cell. The read access time of the proposed SRAM cell is 0.96×, 0.91×, 0.99×, 0.98× smaller than 6T, Quatro, We-Quatro, and NQuatro SRAM cells, and 1.01× higher than RHD12T cell, and the write delay of the proposed SRAM is 0.93×, 0.46×, 0.72×, 0.41×, 0.47×, less than that of 6T, Quatro, We-Quatro, RHD12T, and NQuatro respectively. 2000 Monte Carlo simulation for power dissipation and upset margin reveals that the process variation has less impact on the proposed SRAM and 1.64× better tolerance against logic flipping. Further, for the P-Quatro, the critical charge is 41.51 fC and is 2.05×, 1.75×, 1.93×, and 1.48× greater than Quatro, We-Quatro, RHD12T, and NQuatro memory cells. We conducted an assessment using an electrical quality matrix (EQM) that takes into account all performance parameters. The findings reveal that the EQM of the proposed cell surpasses that of the 6T, Quatro, We-Quatro, RHD12T, and NQuatro SRAM cells by factors of 0.82×, 0.35×, 0.49×, 0.71×, and 0.21×, respectively. This indicates that the proposed cell demonstrates superior electrical quality across various metrics compared to the other SRAM cell designs evaluated.

经过辐射强化的 P-Quatro 12T SRAM 单元具有很强的 SEU 容限,适用于航空航天应用
航空航天环境中含有高能粒子,这些粒子会触发单事件瞬态(SET),从而导致存储单元中的单事件中断(SEU)。高效 SRAM 单元的设计必须能够容忍软误差,以抵御极端环境。本文提出了一种基于极性破坏机制的高效辐射加固设计 12T P-Quatro SRAM 单元。所提出的单元具有更好的可写性,WSNM 比对应的 We-Quatro SRAM 单元高 1.08 倍。拟议的 SRAM 单元的读访问时间分别比 6T、Quatro、We-Quatro 和 NQuatro SRAM 单元小 0.96×、0.91×、0.99×、0.98×,比 RHD12T 高 1.01×,写延迟分别比 6T、Quatro、We-Quatro、RHD12T 和 NQuatro 小 0.93×、0.46×、0.72×、0.41×、0.47×。2000 年蒙特卡罗功率耗散和失调裕量仿真显示,工艺变化对拟议的 SRAM 影响较小,对逻辑翻转的容差提高了 1.64 倍。此外,P-Quatro 的临界电荷为 41.51 fC,分别比 Quatro、We-Quatro、RHD12T 和 NQuatro 存储单元高 2.05 倍、1.75 倍、1.93 倍和 1.48 倍。我们使用考虑了所有性能参数的电质量矩阵(EQM)进行了评估。评估结果表明,拟议电池的 EQM 分别比 6T、Quatro、We-Quatro、RHD12T 和 NQuatro SRAM 电池高出 0.82 倍、0.35 倍、0.49 倍、0.71 倍和 0.21 倍。这表明,与所评估的其他 SRAM 单元设计相比,所提出的单元在各种指标上都表现出更优越的电气质量。
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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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