{"title":"Radiation hardened P-Quatro 12T SRAM cell with strong SEU tolerance for aerospace applications","authors":"","doi":"10.1016/j.microrel.2024.115497","DOIUrl":null,"url":null,"abstract":"<div><p>The aerospace environment contains extremely energetic particles that trigger single-event transients (SET), leading to single-event upsets (SEU) in the memory cell. An efficient SRAM cell must be designed to tolerate soft error to withstand the extreme environment. This paper proposes a highly efficient radiation hardened-by-design 12T P-Quatro SRAM cell based on a polarity upset mechanism. The proposed cell has better writability, and WSNM is 1.08<span><math><mo>×</mo></math></span> higher than its counterpart We-Quatro SRAM cell. The read access time of the proposed SRAM cell is 0.96<span><math><mo>×</mo></math></span>, 0.91<span><math><mo>×</mo></math></span>, 0.99<span><math><mo>×</mo></math></span>, 0.98<span><math><mo>×</mo></math></span> smaller than 6T, Quatro, We-Quatro, and NQuatro SRAM cells, and 1.01<span><math><mo>×</mo></math></span> higher than RHD12T cell, and the write delay of the proposed SRAM is 0.93<span><math><mo>×</mo></math></span>, 0.46<span><math><mo>×</mo></math></span>, 0.72<span><math><mo>×</mo></math></span>, 0.41<span><math><mo>×</mo></math></span>, 0.47<span><math><mo>×</mo></math></span>, less than that of 6T, Quatro, We-Quatro, RHD12T, and NQuatro respectively. 2000 Monte Carlo simulation for power dissipation and upset margin reveals that the process variation has less impact on the proposed SRAM and 1.64<span><math><mo>×</mo></math></span> better tolerance against logic flipping. Further, for the P-Quatro, the critical charge is 41.51 fC and is 2.05<span><math><mo>×</mo></math></span>, 1.75<span><math><mo>×</mo></math></span>, 1.93<span><math><mo>×</mo></math></span>, and 1.48<span><math><mo>×</mo></math></span> greater than Quatro, We-Quatro, RHD12T, and NQuatro memory cells. We conducted an assessment using an electrical quality matrix (EQM) that takes into account all performance parameters. The findings reveal that the EQM of the proposed cell surpasses that of the 6T, Quatro, We-Quatro, RHD12T, and NQuatro SRAM cells by factors of 0.82<span><math><mo>×</mo></math></span>, 0.35<span><math><mo>×</mo></math></span>, 0.49<span><math><mo>×</mo></math></span>, 0.71<span><math><mo>×</mo></math></span>, and 0.21<span><math><mo>×</mo></math></span>, respectively. This indicates that the proposed cell demonstrates superior electrical quality across various metrics compared to the other SRAM cell designs evaluated.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6000,"publicationDate":"2024-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S002627142400177X","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The aerospace environment contains extremely energetic particles that trigger single-event transients (SET), leading to single-event upsets (SEU) in the memory cell. An efficient SRAM cell must be designed to tolerate soft error to withstand the extreme environment. This paper proposes a highly efficient radiation hardened-by-design 12T P-Quatro SRAM cell based on a polarity upset mechanism. The proposed cell has better writability, and WSNM is 1.08 higher than its counterpart We-Quatro SRAM cell. The read access time of the proposed SRAM cell is 0.96, 0.91, 0.99, 0.98 smaller than 6T, Quatro, We-Quatro, and NQuatro SRAM cells, and 1.01 higher than RHD12T cell, and the write delay of the proposed SRAM is 0.93, 0.46, 0.72, 0.41, 0.47, less than that of 6T, Quatro, We-Quatro, RHD12T, and NQuatro respectively. 2000 Monte Carlo simulation for power dissipation and upset margin reveals that the process variation has less impact on the proposed SRAM and 1.64 better tolerance against logic flipping. Further, for the P-Quatro, the critical charge is 41.51 fC and is 2.05, 1.75, 1.93, and 1.48 greater than Quatro, We-Quatro, RHD12T, and NQuatro memory cells. We conducted an assessment using an electrical quality matrix (EQM) that takes into account all performance parameters. The findings reveal that the EQM of the proposed cell surpasses that of the 6T, Quatro, We-Quatro, RHD12T, and NQuatro SRAM cells by factors of 0.82, 0.35, 0.49, 0.71, and 0.21, respectively. This indicates that the proposed cell demonstrates superior electrical quality across various metrics compared to the other SRAM cell designs evaluated.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.