Suppression of Threshold Voltage Variation by H₂ Plasma Improved KrF Photoresist Profile

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-08-16 DOI:10.1109/TED.2024.3433311

Cheng-Hao Liang;Ran Bi;Hao Liu;Song He;Hang Li;Yu-Long Jiang

引用次数: 0

Abstract

The effect of H2 plasma improved KrF photoresist (PR) profile after exposure without bottom anti-reflection coating (BARC) on planar PMOSFET performance in static random access memory (SRAM) is investigated. The proposed H2 plasma treatment is revealed to be able to obtain a well-controlled KrF PR profile with a more PR-safer process. It is demonstrated that such a KrF PR profile can effectively prevent the ions of NMOSFET pocket ion implantation from entering the substrate of PMOSFET. Hence, ~17% reduction of threshold voltage local variation for PMOSFETs in SRAM and ~8 mV improvement of static noise margin (SNM) for SRAM cell can be obtained without performance degradation for both NMOSFETs and PMOSFETs.

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通过 H₂ 等离子体改进 KrF 光刻胶剖面来抑制阈值电压变化

研究了 H2 等离子体在无底部抗反射涂层 (BARC) 曝光后对 KrF 光阻 (PR) 曲线的改进对静态随机存取存储器 (SRAM) 中平面 PMOSFET 性能的影响。结果表明，所建议的 H2 等离子体处理方法能够获得控制良好的 KrF PR 曲线，并采用更安全的 PR 工艺。研究表明，这种 KrF PR 曲线能有效防止 NMOSFET 袋式离子注入的离子进入 PMOSFET 的基底。因此，在不降低 NMOSFET 和 PMOSFET 性能的情况下，可将 SRAM 中 PMOSFET 的阈值电压局部变化降低约 17%，并将 SRAM 单元的静态噪声裕量 (SNM) 提高约 8 mV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.

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