Diode-Like Field Emission Devices Fabricated by Standard 0.35-μm CMOS MEMS Process

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-08-14 DOI:10.1109/TED.2024.3436032

Wen-Teng Chang;An-De Xu;Shao-Ping Huang;Sin-Rong Liu;Ting-Yi Wu

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Abstract

This research presents a new method for manufacturing field emission devices (FEDs) using a standard 0.35-

$\mu $

m CMOS MEMS fabrication process, allowing the devices to function in normal air conditions. To enable nanoscale electrode gaps and atmospheric pressure operation, the FED’s layout is strategically modified to function as a diode, deliberately bypassing certain design rules for low-voltage capability. The SEM images suggest that the actual gap distance separating the electrodes is typically smaller than the initially intended dimensions. Measurements reveal an inverse relationship between the diode-like FEDs’ threshold voltages and the designed electrode spacing. These diode-like FEDs exhibit gentle rectification behavior, especially those with lower threshold voltages. This approach drastically simplifies FED fabrication, demonstrating the feasibility of integrating FEDs with CMOS technology. While the current 0.35-

$\mu $

m CMOS MEMS process employs aluminum metal stacks, this material choice may compromise reliability, especially when exposed to high-frequency alternating voltages.

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采用标准 0.35μm CMOS MEMS 工艺制造的类二极管场发射装置

这项研究提出了一种使用标准 0.35- $\mu $ m CMOS MEMS 制造工艺制造场发射器件 (FED) 的新方法，使器件能够在正常空气条件下工作。为了实现纳米级电极间隙和大气压操作，FED 的布局经过了战略性修改，以发挥二极管的功能，有意绕过了低压能力的某些设计规则。扫描电子显微镜图像显示，电极之间的实际间隙距离通常小于最初设计的尺寸。测量结果显示，类二极管 FED 的阈值电压与设计的电极间距之间存在反比关系。这些类二极管 FED 表现出温和的整流行为，尤其是那些阈值电压较低的 FED。这种方法大大简化了 FED 的制造，证明了将 FED 与 CMOS 技术相结合的可行性。虽然目前 0.35- $\mu $ m CMOS MEMS 工艺采用铝金属叠层，但这种材料选择可能会影响可靠性，尤其是在暴露于高频交变电压时。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.