{"title":"Improved Temperature-Scalable DC model for SiC power MOSFET including Quasi-Saturation effect","authors":"","doi":"10.1016/j.sse.2024.108993","DOIUrl":null,"url":null,"abstract":"<div><p>In this paper, accurate temperature-dependent static model for Silicon-Carbide (SiC) power MOSFET is presented. The proposed model is formed by two equations relating to linear and saturation operating regions. In this model, new formalism of the saturation drain current is introduced to consider the peculiar features observed in the <em>I</em>-<em>V</em> static characteristics of the SiC power MOSFET: a) moderate inversion region, or region of low gate voltages and b) quasi-saturation region, region of high gate voltages at which the drain current becomes less sensitive to the increase of gate voltage. In addition, the model captures with high-precision the transition region between linear and saturation region, pinch-off region, noticed in the output characteristics of the SiC power MOSFETs. It will be shown that the model equations ensure continuity and smooth transition between all operating regions. Temperature scaling of the model is carried out by its temperature scaling parameters. The proposed compact model is simple and efficient using reduced number of technology independent parameters. Simple parameter extraction procedure is described that uses an optimizer algorithm based on good experimental initial guess. Excellent agreement is obtained by comparing model to TCAD simulation and device measurement.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124001424","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, accurate temperature-dependent static model for Silicon-Carbide (SiC) power MOSFET is presented. The proposed model is formed by two equations relating to linear and saturation operating regions. In this model, new formalism of the saturation drain current is introduced to consider the peculiar features observed in the I-V static characteristics of the SiC power MOSFET: a) moderate inversion region, or region of low gate voltages and b) quasi-saturation region, region of high gate voltages at which the drain current becomes less sensitive to the increase of gate voltage. In addition, the model captures with high-precision the transition region between linear and saturation region, pinch-off region, noticed in the output characteristics of the SiC power MOSFETs. It will be shown that the model equations ensure continuity and smooth transition between all operating regions. Temperature scaling of the model is carried out by its temperature scaling parameters. The proposed compact model is simple and efficient using reduced number of technology independent parameters. Simple parameter extraction procedure is described that uses an optimizer algorithm based on good experimental initial guess. Excellent agreement is obtained by comparing model to TCAD simulation and device measurement.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.