{"title":"On the Thickness Scaling of Ferroelectric Hafnia","authors":"Suzanne Lancaster;Stefan Slesazeck;Thomas Mikolajick","doi":"10.1109/TMAT.2024.3423665","DOIUrl":null,"url":null,"abstract":"The discovery of ferroelectricity in hafnia has revolutionized the field and brought industry applications closer than ever. One of the most interesting aspects of hafnia compared to other ferroelectric materials is the possibility of scaling film thicknesses down to the 10 nm regime and even below. However, going significantly below 10 nm poses some challenges in terms of materials engineering. In this perspective paper, the topic of thickness scaling in ferroelectric hafnia will be discussed in terms of physical limits, current achievements and challenges, and potential applications in different device types.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"36-48"},"PeriodicalIF":0.0000,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Materials for Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10587090/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The discovery of ferroelectricity in hafnia has revolutionized the field and brought industry applications closer than ever. One of the most interesting aspects of hafnia compared to other ferroelectric materials is the possibility of scaling film thicknesses down to the 10 nm regime and even below. However, going significantly below 10 nm poses some challenges in terms of materials engineering. In this perspective paper, the topic of thickness scaling in ferroelectric hafnia will be discussed in terms of physical limits, current achievements and challenges, and potential applications in different device types.