Performance of thermo-compression bonding for HgCdTe based focal plane array

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2024-08-09 DOI:10.1016/j.microrel.2024.115476

Anand Singh, Vijay Singh Meena, Ravinder Pal

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Abstract

HgCdTe based infrared focal plane array (IRFPA) continues to be the best performing sensor for imaging infrared seeker systems. A detailed study on the flip chip bonding is described for an improvement in the performance and reliability of FPA under stringent thermal and mechanical cycling load. HgCdTe material has a limitation in the bonding temperature and pressure to preserve the detector performance. Process of thermo-compression bonding is developed here for a large format HgCdTe detector array with ultra-fine pitch. Flip-chip bonding under ultra-low force of 4.6 × 10⁻⁴ N/bump is achieved with minimum residual stress and it protects the HgCdTe photo-diodes from dislocation circuit multiplication after hybridization. This thermo-compression process is directly usable for other materials such as InSb, T2SL and InGaAs etc. with due consideration of the material's properties like Young's modulus, coefficient of thermal expansion, Poisson ratio and mechanical strength. HgCdTe FPAs with the optimum bonding parameters are packed in detector-dewar-cooler-assembly (DDCA) and tested for stringent thermal shock, mechanical shock and random vibration process. The fatigue life of 10⁴ thermal cycles is achieved to make suitable for fail safe operation. HgCdTe FPA will have a life span of 13 years (if it is cooled down twice on each day) which is more than the vacuum integrity shelf life of a sealed DDCA.

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基于碲化镉汞的焦平面阵列的热压焊接性能

基于碲化镉汞的红外焦平面阵列（IRFPA）仍然是红外寻像系统中性能最好的传感器。为了在严格的热循环和机械循环负载条件下提高 FPA 的性能和可靠性，我们对倒装芯片键合进行了详细研究。碲化镉汞材料在保持探测器性能方面受到粘合温度和压力的限制。这里开发的热压键合工艺适用于超细间距的大尺寸碲化镉汞探测器阵列。在 4.6 × 10-4 N/bump 的超低力下实现了倒装芯片键合，残余应力最小，并保护了碲化镉汞光电二极管在杂化后免受位错回路倍增的影响。在适当考虑材料特性（如杨氏模量、热膨胀系数、泊松比和机械强度）的情况下，这种热压工艺可直接用于其他材料，如 InSb、T2SL 和 InGaAs 等。具有最佳键合参数的 HgCdTe FPA 被装入探测器-露华-冷却器组件（DDCA），并进行了严格的热冲击、机械冲击和随机振动过程测试。疲劳寿命达到 104 个热循环，适合故障安全运行。HgCdTe FPA 的寿命为 13 年（如果每天冷却两次），超过了密封 DDCA 的真空完整性保质期。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.