Development of a piezoelectric resonator with in-plane displacement-amplification mechanism

Mengying Zhang, Quanliang Zhao, Zhongxiang Li, Siyun Wang, Guangping He, Lei Zhao
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Abstract

A piezoelectric in-plane resonator with symmetrical oblique-beam amplification mechanism was analyzed and developed. The resonator is comprised of a piezoelectric-heterogeneous-bimorph beam in the middle and elastic oblique beams symmetrically distributed on both sides. Firstly, analytical model for its in-plan deformation was derived by combining elastic deformation of the oblique beams with electrostriction bending of the piezoelectric beam. Then geometric parameters of the whole structure were optimized mainly based on the analytical model to obtain the maximum output horizontal displacement. Besides, its finite element model was simulated and analyzed to verify the analytical model, and find the optimal operating mode, at which the significant amplified horizontal displacement is generated with suppressed vertical one. The resonator was fabricated on a SOI wafer with deposited PNZT piezoelectric film. The fabricated resonator was characterized and tested. Its optimal operating mode was verified and the operating frequency was measured as 16.57 kHz with in-plan displacement of 7.71 μm under 20Vp-p driving signal. The device obtained significant in-plane resonance with almost no out-of-plane displacement.

Abstract Image

开发具有平面内位移放大机制的压电谐振器
分析并开发了一种具有对称斜梁放大机制的压电平面内谐振器。该谐振器由位于中间的压电异质双晶梁和对称分布于两侧的弹性斜梁组成。首先,通过将斜梁的弹性变形与压电梁的电致伸缩弯曲相结合,得出了谐振器平面内变形的分析模型。然后,主要根据分析模型优化整个结构的几何参数,以获得最大输出水平位移。此外,还对其有限元模型进行了仿真和分析,以验证分析模型,并找到最佳工作模式,在该模式下,水平位移显著放大,垂直位移被抑制。谐振器是在 SOI 晶圆上用沉积的 PNZT 压电薄膜制造的。对制作的谐振器进行了表征和测试。在 20Vp-p 驱动信号下,测量到其最佳工作模式的工作频率为 16.57 kHz,平面内位移为 7.71 μm。该装置获得了显著的平面内共振,几乎没有平面外位移。
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