3-D NAND Oxide/Nitride Tier Stack Thickness and Zonal Measurements With Infrared Metrology

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2024-06-03 DOI:10.1109/TSM.2024.3404475

Youcheng Wang;Zhuo Chen;Cong Wang;Nick Keller;G. Andrew Antonelli;Zhuan Liu;Troy Ribaudo;Rostislav Grynko

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Abstract

Three dimensional Not-And (3D NAND) flash memory devices are scaling in the vertical direction to more than 200 oxide/sacrificial wordline nitride layers to further increase storage capacity and enhance energy efficiency. The accurate measurement of the thicknesses of these layers is critical to controlling stress-induced wafer warping and pattern distortion. While traditional optical metrology in the UV-vis-NIR range offers a non-destructive inline solution for high volume manufacturing, we demonstrate in this paper, that mid-IR metrology has advantages in de-correlating oxide and nitride thicknesses owing to their unique absorption signatures. Furthermore, because of the depths sensitivity of oxide and nitride absorptions, the simulated measurement results show the ability to differentiate thickness variations in the vertical zones. Good blind test results were obtained with a machine learning model trained on pseudo-references and pseudo spectra with added skew.

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利用红外测量技术测量 3D NAND 氧化物/氮化物层叠厚度和区域分布

三维非并行（3D NAND）闪存设备正在垂直方向上扩展到 200 多层氧化物/人工字线氮化层，以进一步提高存储容量和能效。准确测量这些层的厚度对于控制应力引起的晶片翘曲和图案变形至关重要。传统的紫外-可见-近红外光学测量为大批量生产提供了无损的在线解决方案，而我们在本文中证明，中红外测量由于其独特的吸收特征，在去相关氧化物和氮化物厚度方面具有优势。此外，由于氧化物和氮化物吸收的深度敏感性，模拟测量结果显示了区分垂直区域厚度变化的能力。利用在伪参考和添加了倾斜度的伪光谱上训练的机器学习模型，获得了良好的盲测结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Semiconductor Manufacturing 工程技术-工程：电子与电气

CiteScore

5.20

自引率

11.10%

发文量

101

审稿时长

3.3 months

期刊介绍： The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.