All-Inorganic Hermetic Packaging of Deep-Ultraviolet Light-Emitting Diodes Through Laser Localized Heating and Welding

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-08-06 DOI:10.1109/TED.2024.3435182

Lin Luo;Linlin Xu;Jiuzhou Zhao;Renli Liang;Zhengchen Li;Yang Peng;Xinzhong Wang;Jiangnan Dai;Mingxiang Chen

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Abstract

Deep-ultraviolet light-emitting diodes (DUV-LEDs) represent a new generation of ultraviolet light sources with applications in sterilization, medical health, and biological detection. However, the traditional organic packaging is unable to meet the rigorous requirements of highly reliable high-power DUV-LEDs. In this work, an all-inorganic hermetic packaging solution based on laser localized heating and welding was developed for high-power DUV-LEDs. The parameters of laser localized welding were optimized to obtain a high-strength, crack-free welded joint. In the transition welding mode, the packaging cavity displays excellent gas tightness with a leakage rate of

$1.25\times 10^{-{9}}~\text {Pa}\cdot \text {m}^{{3}}$

/s and the welded joint achieves high shear strength of 184.8 MPa. At a driving current of 350 mA, the voltage and light output power (LOP) of the packaged DUV-LED are 6.172 V and 60.44 mW, respectively. After the accelerated aging test for 250 h, the LOP of hermetic packaged DUV-LED exhibited a mere 3.24% reduction, in contrast to the 31.76% and 41.18% declines in traditional semi-inorganic packaged and unpackaged DUV-LEDs, respectively. Our work provides a meaningful guidance and solution for the highly reliable and board-level packaging of DUV-LEDs.

查看原文本刊更多论文

通过激光局部加热和焊接实现深紫外发光二极管的全无机密封封装

深紫外发光二极管（DUV-LED）是新一代紫外光源，可应用于消毒灭菌、医疗卫生和生物检测等领域。然而，传统的有机封装无法满足高可靠性大功率 DUV-LED 的严格要求。在这项工作中，针对大功率 DUV-LED 开发了一种基于激光局部加热和焊接的全无机密封封装解决方案。对激光局部焊接的参数进行了优化，以获得高强度、无裂纹的焊点。在过渡焊接模式下，封装腔显示出优异的气密性，泄漏率为 1.25times 10^{-{9}}~text {Pa}\cdot \text {m}^{3}}$ /s，焊接点达到 184.8 MPa 的高剪切强度。在 350 mA 的驱动电流下，封装后的 DUV-LED 的电压和光输出功率（LOP）分别为 6.172 V 和 60.44 mW。经过 250 小时的加速老化测试后，密封封装的 DUV-LED 的 LOP 仅下降了 3.24%，而传统的半无机封装和非封装 DUV-LED 则分别下降了 31.76% 和 41.18%。我们的工作为高可靠性的板级封装 DUV-LED 提供了有意义的指导和解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.

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