Effects of Electrode Size Mismatch on the Apparent Sensitivity of Perovskite X-Ray Detectors

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yuanxiao Chen;Yuliang Yi;Xulong Gao;Nan Li;Feifei Huang;Shuaishuai Yu;Tao Zeng;Wei Huang;Yehao Deng;Jingjing Zhao
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引用次数: 0

Abstract

Metal halide perovskite X-ray detectors have demonstrated sensitivities over one thousand times higher than those of commercial X-ray detectors. However, there is currently no standardized sensitivity testing protocol. In this study, we found that the electrode configuration significantly influences sensitivity values. The measured apparent sensitivity could be extremely high, when electrode is small and mismatched with X-ray active layer. This phenomenon arises from collection of charge carriers in the range of approximately 1 mm around the electrode and is intensified with higher carrier mobility and lifetime product, as well as applied bias. The phenomenon can be mitigated by incorporating guard rings. This work highlights a significant testing challenge often overlooked in X-ray detector sensitivity characterization, which could lead to serious overestimation of sensitivity, especially for materials with high mobility-lifetime product such as perovskite.
电极尺寸不匹配对包晶体 X 射线探测器表观灵敏度的影响
金属卤化物过氧化物 X 射线探测器的灵敏度比商用 X 射线探测器高出一千倍以上。然而,目前还没有标准化的灵敏度测试协议。在这项研究中,我们发现电极配置对灵敏度值有很大影响。当电极较小且与 X 射线活性层不匹配时,测得的表观灵敏度可能极高。这种现象源于电荷载流子在电极周围约 1 毫米范围内的聚集,载流子迁移率和寿命积越高,施加的偏压也越大。这种现象可以通过加入保护环来缓解。这项工作凸显了在 X 射线探测器灵敏度表征中经常被忽视的一个重要测试挑战,它可能导致灵敏度被严重高估,尤其是对于具有高迁移率-寿命积的材料,如包晶石。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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