Dual-Gate Carbon Nanotube Thin-Film Transistors With Printed Channel and Passivation Interlayer on Plastic Foil

Abstract

This letter presents the fabrication process of carbon nanotube-based thin-film transistors (CNT-TFTs) with direct-printed CNT channels on flexible substrates and investigates the implications of dual-gating effects. Enhancing the electrical percolation of the nanotube network channel is achieved through a post-annealing process, which includes thermal treatment and solvent immersion. Introducing a thin polymer passivation layer enhances the device’s electrostatic characteristics, eliminating hysteresis. Compared to single-gate CNT-TFTs, the dual-gate configuration allows for full depletion operation. This results in a reduced subthreshold slope and an increased on/off current ratio. These findings offer valuable insights into leveraging dual-gating effects for developing printed CNT-TFT circuits, with potential applications in high-performance, low-power, large-area, and flexible electronic systems.