Investigation of Nitrogen-Based Plasma Passivation on GaN RF HEMTs Using Various Precursors

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-06-11 DOI:10.1109/JEDS.2024.3412186

Qiaoyu Hu;Wei-Chih Cheng;Xiguang Chen;Chenkai Deng;Lina Liao;Wenmao Li;Yang Jiang;Jiaqi He;Yi Zhang;Chuying Tang;Peiran Wang;Kangyao Wen;Fangzhou Du;Yifan Cui;Mujun Li;Wenyue Yu;Robert Sokolovskij;Nick Tao;Qing Wang;Hongyu Yu

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Abstract

This study investigates the DC and RF performance of RF GaN High Electron Mobility Transistors (HEMTs) subjected to surface pretreatments by N ₂ and N ₂ O plasma. The filling of nitrogen vacancies or the passivation effect introduced by the thin GaON layer result in enhanced DC characteristics and RF performance for devices treated with nitrogen-based plasma. Compared to the untreated device, the device treated with N ₂ plasma exhibited a significant improvement in performance, i.e., the saturated current increased by approximately 16%, the characteristic frequency (f _T ) had an increase of 27.6 GHz, the maximum oscillating frequency (f _max ) increased by 60.4 GHz. Furthermore, the breakdown voltage had a 10.7% increase, and the dynamic/static on-resistance ratio decreased from 1.34 to 1.18. These results highlight the potential of nitrogen-based plasma treatments in improving the performance of RF GaN HEMTs.

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使用各种前驱体对氮基等离子体钝化 GaN 射频 HEMT 的研究

本研究调查了经过 N2 和 N2O 等离子体表面预处理的射频氮化镓高电子迁移率晶体管 (HEMT) 的直流和射频性能。氮空位的填充或氮化镓薄层引入的钝化效应使氮基等离子体处理过的器件具有更强的直流特性和射频性能。与未处理的器件相比，用氮等离子体处理的器件性能有显著提高，即饱和电流提高了约 16%，特性频率（fT）提高了 27.6 GHz，最大振荡频率（fmax）提高了 60.4 GHz。此外，击穿电压增加了 10.7%，动态/静态导通电阻比从 1.34 降至 1.18。这些结果凸显了氮基等离子体处理在提高射频 GaN HEMT 性能方面的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.