{"title":"A 1.1-nJ/Classification True Analog Current Computing on Multilayer Neural Network With Crystalline-IGZO/Si-CMOS Monolithic Stack Technology","authors":"Kazuki Tsuda;Kazuma Furutani;Yuto Yakubo;Hiromichi Godo;Yoshinori Ando;Atsutake Kosuge;Toru Nakura;Shunpei Yamazaki","doi":"10.1109/JEDS.2024.3439712","DOIUrl":null,"url":null,"abstract":"We prototyped a true analog current computing multilayer neural network (NN) chip, where multiple analog in-memory computing (AiMC) circuit blocks are connected to each other via simple analog non-linear operation circuits. The true analog current computing is achieved with the invention of an analog current rectified linear unit (ReLU) circuit of a three-stage current mirror. With the prototyped NN chip, we demonstrated that the true analog computing (1) achieves process variation compensation utilizing current driving, (2) eliminates digital-analog or analog-digital data conversion between NNs, and (3) realizes low power inference, not only in multiply-accumulate (MAC) but in ReLU operation. Through classification of Mixed National Institute of Standards and Technology dataset, the chip exhibits a low energy of 1.1 nJ/classification and an accuracy of 91.6%, achieves weight retention of five hours, much longer than dynamic random access memory, and enables 68% power reduction compared with serially connected two single-layer NN chips with analog-digital converters and digital-analog converters in between. Although periodic refresh from an external storage class memory is necessary for applications that require continuous operation exceeding five hours, our AiMC capable of MAC and non-linear operations with low power is effective in applications such as edge artificial intelligence terminals with limited power sources.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"594-604"},"PeriodicalIF":2.0000,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10628044","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10628044/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
We prototyped a true analog current computing multilayer neural network (NN) chip, where multiple analog in-memory computing (AiMC) circuit blocks are connected to each other via simple analog non-linear operation circuits. The true analog current computing is achieved with the invention of an analog current rectified linear unit (ReLU) circuit of a three-stage current mirror. With the prototyped NN chip, we demonstrated that the true analog computing (1) achieves process variation compensation utilizing current driving, (2) eliminates digital-analog or analog-digital data conversion between NNs, and (3) realizes low power inference, not only in multiply-accumulate (MAC) but in ReLU operation. Through classification of Mixed National Institute of Standards and Technology dataset, the chip exhibits a low energy of 1.1 nJ/classification and an accuracy of 91.6%, achieves weight retention of five hours, much longer than dynamic random access memory, and enables 68% power reduction compared with serially connected two single-layer NN chips with analog-digital converters and digital-analog converters in between. Although periodic refresh from an external storage class memory is necessary for applications that require continuous operation exceeding five hours, our AiMC capable of MAC and non-linear operations with low power is effective in applications such as edge artificial intelligence terminals with limited power sources.
期刊介绍:
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.