A Recessed Source Contact Technology to Reduce the Specific On-Resistance of Power MOSFET on 4H-SiC

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-08-02 DOI:10.1109/LED.2024.3437372

Bing-Yue Tsui;Jui-Tse Hsiao;Ming-Han Wang;Chia-Lung Hung;Yi-Kai Hsiao;Jing-Neng Yao;Kuang-Hao Chiang;ChiaHua Ho;Hao-Chung Kuo

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Abstract

Reducing the on-resistance of SiC MOSFETs is crucial for lowering power losses and is a key aspect of MOSFET design. This letter proposes a recessed source contact (RSC) process, which utilizes the side contacts of the recessed contact structure to increase the effective contact area after narrowing the contact window width. This technology can reduce cell pitch as well as specific on-resistance without sacrificing other resistance components. In our demonstration of 1.7 kV VDMOSFETs, reducing the cell pitch from

$6.2~\mu $

m to

$5.0~\mu $

m by shrinking the contact width with the assistance of the RSC structure decreases the specific on-resistance by 12.6%. Conversely, without employing the RSC structure, the specific on-resistance increases by 5%. Furthermore, the RSC process allows for continuous P-well contact. Since the P ⁺ contact is embedded under the N ⁺ source, the depth and width of the P ⁺ layer are not constrained by the N ⁺ source layer.

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降低 4H-SiC 功率 MOSFET 特定导通电阻的凹陷源极触点技术

降低 SiC MOSFET 的导通电阻对于降低功率损耗至关重要，也是 MOSFET 设计的一个关键方面。这封信提出了一种凹入式源触点 (RSC) 工艺，该工艺利用凹入式触点结构的侧触点，在缩小触点窗口宽度后增加有效触点面积。这种技术可以在不牺牲其他电阻成分的情况下，减小电池间距和特定导通电阻。在我们的 1.7 kV VDMOSFET 演示中，在 RSC 结构的帮助下，通过缩小接触宽度将单元间距从 6.2~\mu $ m 减小到 5.0~\mu $ m，从而将比导通电阻降低了 12.6%。相反，如果不采用 RSC 结构，比导通电阻则会增加 5%。此外，RSC 工艺还能实现连续的 P 孔接触。由于 P+ 触点嵌入 N+ 源下，因此 P+ 层的深度和宽度不受 N+ 源层的限制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.