Investigation of p- and n-Type Quantum Dot Arrays Manufactured in 22-nm FDSOI CMOS at 2–4 K and 300 K

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-07-29 DOI:10.1109/LED.2024.3435380

Shai Bonen;Suyash Pati Tripathi;Julie McIntosh;Thomas Jager;Sorin P. Voinigescu

引用次数: 0

Abstract

Large arrays of 1024 single and 2048 coupled quantum dots (QDs) are characterized at 2–4 K and 300 K for the first time using transport measurements. We demonstrate < 0.2 fA gate leakage current, tunnel current transport through 19 series-connected p - and n -type QDs, 2D-coupling in arrays of 18nm

$ \times 15$

$ \times 6$

nm QDs with 40-nm spacing, back gate selectivity and tuneability of quantum features, and scaling of the gate-voltage difference between Coulomb peaks with increasing gate oxide thickness and decreasing QD size for both p - and n -type structures.

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研究在 2-4 K 和 300 K 温度条件下用 22 纳米 FDSOI CMOS 制造的 p 型和 n 型量子点阵列

我们首次在 2-4 K 和 300 K 温度条件下利用传输测量对 1024 个单个和 2048 个耦合量子点 (QD) 的大型阵列进行了表征。我们证明了 < 0.2 fA 的栅极漏电流、通过 19 个串联的 p 型和 n 型量子点的隧道电流传输、间距为 40nm 的 18nm $ \times 15$ nm $ \times 6$ nm QD 阵列中的二维耦合、量子特征的反向栅极选择性和可调性，以及库仑峰之间的栅极电压差随着 p 型和 n 型结构的栅极氧化物厚度增加和 QD 尺寸减小而缩放。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.