Demonstration of SA TG Coplanar IGZO TFTs With Large Subthreshold Swing Using the Back-Gate Biasing Technique for AMOLED Applications

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-07-29 DOI:10.1109/JEDS.2024.3434613

Chae-Eun Oh;Ye-Lim Han;Dong-Ho Lee;Jin-Ha Hwang;Hwan-Seok Jeong;Myeong-Ho Kim;Kyoung-Seok Son;Sunhee Lee;Sang-Hun Song;Hyuck-In Kwon

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Abstract

We demonstrate that the shorter channel self-aligned top-gate (SA TG) coplanar indiumgallium- zinc oxide (IGZO) thin-film transistors (TFTs), with negative voltage applied to the back-gate, exhibit superior characteristics as driving transistors in organic light-emitting diode (OLED) pixels compared to their longer channel counterparts. The shorter channel IGZO TFTs (with a channel length (L) of 3 μm) biased with a back gate voltage of −3.5 V showed a larger subthreshold swing (SS = 0.21 V/dec) than the longer channel ones (with L = 5 μm, SS = 0.16 V/dec) with a similar threshold value (VTH = 0.7–0.8 V). A large SS is beneficial for controlling grayscale levels, especially at low gray levels, when IGZO TFTs are used as driving transistors in OLED pixels. Furthermore, the negatively back-gate-biased shorter channel SA TG coplanar IGZO TFTs exhibited significantly enhanced electrical stability compared to the longer channel ones under both positive gate bias and hot carrier stresses. The findings of this study are expected to be useful in expanding the utility of IGZO TFTs in OLED displays.

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利用反向栅极偏压技术为 AMOLED 应用展示具有大亚阈值波动的 SA TG 共面 IGZO TFT

我们证明，在背栅施加负电压的短沟道自对准顶栅（SA TG）共面铟镓锌氧化物（IGZO）薄膜晶体管（TFT）与长沟道晶体管相比，在有机发光二极管（OLED）像素中作为驱动晶体管具有更优越的特性。与阈值（VTH = 0.7-0.8 V）相似的长沟道（沟道长度为 5 μm，SS = 0.16 V/dec）相比，背栅电压为 -3.5 V 的短沟道 IGZO TFT（沟道长度为 3 μm）显示出更大的阈下摆动（SS = 0.21 V/dec）。当 IGZO TFT 用作 OLED 像素的驱动晶体管时，较大的 SS 有利于控制灰度级，尤其是低灰度级。此外，与长沟道 IGZO TFT 相比，负背栅偏压的短沟道 SA TG 共面 IGZO TFT 在正栅偏压和热载流子应力下的电气稳定性都有显著提高。这项研究的结果有望有助于扩大 IGZO TFT 在 OLED 显示屏中的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.