Imprint-Correlated Retention Loss in Hf₀.₅Zr₀.₅O₂ Ferroelectric Thin Film Through Wide-Temperature Characterizations

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-07-31 DOI:10.1109/TED.2024.3433317

Xiaopeng Li;Lu Tai;Pengpeng Sang;Xiaoyu Dou;Xuepeng Zhan;Hao Xu;Xiaolei Wang;Jixuan Wu;Jiezhi Chen

引用次数: 0

Abstract

To address the concerns on the retention loss of HfO2-based ferroelectric (FE) devices in versatile applications, we conduct a comprehensive wide temperature range (250–400 K) characterization on a 9-nm Hf0.5Zr0.5O2 (HZO) film. It reveals that the retention will be damaged by the high temperature and incomplete polarization (fast speed and low amplitude operation). The dominant mechanism is believed to be the imprint effect, which occurs due to the migration of charged defects to the interface along the internal field caused by incomplete polarization. By addressing the intricacies of imprint behaviors and incomplete polarization, this work illuminates crucial aspects of retention loss in FE-HZO thin films.

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通过宽温特性分析 Hf$_{text{0}.\text{5}}$Zr$_{text{0}.\text{5}}$O$_{text{2}}$ 铁电薄膜中的印记相关保持损耗

为了解决基于 HfO2 的铁电（FE）器件在多功能应用中的保持损耗问题，我们对 9 纳米 Hf0.5Zr0.5O2 (HZO) 薄膜进行了全面的宽温度范围（250-400K）表征。结果表明，高温和不完全极化（快速和低振幅操作）会损坏薄膜的保持力。其主要机制被认为是印记效应，这是由于不完全极化导致带电缺陷沿着内部磁场迁移到界面而产生的。通过研究印迹行为和不完全极化的复杂性，这项研究揭示了 FE-HZO 薄膜保留损失的关键方面。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.

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