Li He;Sailei Li;Qi He;Biqi Miao;Qinglei Jiang;Guiying Shen;Wei Luo
{"title":"Improvement of Field Emission Performance of Multilayered Porous Silicon-Based Electron Source Through Hydrogen Passivation","authors":"Li He;Sailei Li;Qi He;Biqi Miao;Qinglei Jiang;Guiying Shen;Wei Luo","doi":"10.1109/LED.2024.3435405","DOIUrl":null,"url":null,"abstract":"This letter proposes an electrochemical-induced hydrogen passivation (CHP) method to improve the field emission performance of the multilayered porous silicon (MPS)-based electron source. We show that CHP treatment enhances the surface morphology of MPS and compensates for inefficient oxidation in the top half of the MPS layer caused by electrochemical oxidation (ECO), achieving complete and uniform oxidation properties for continuous electron acceleration. The measurement results demonstrate that this simple and convenient method significantly enhances the emission current and efficiency, while also improving the repeatability and stability of the MPS-based electron source. Therefore, CHP is a valuable method to enhance the cold emission properties of MPS-based electron sources, making it a promising on-chip electron emitter in vacuum electronic devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10614227/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This letter proposes an electrochemical-induced hydrogen passivation (CHP) method to improve the field emission performance of the multilayered porous silicon (MPS)-based electron source. We show that CHP treatment enhances the surface morphology of MPS and compensates for inefficient oxidation in the top half of the MPS layer caused by electrochemical oxidation (ECO), achieving complete and uniform oxidation properties for continuous electron acceleration. The measurement results demonstrate that this simple and convenient method significantly enhances the emission current and efficiency, while also improving the repeatability and stability of the MPS-based electron source. Therefore, CHP is a valuable method to enhance the cold emission properties of MPS-based electron sources, making it a promising on-chip electron emitter in vacuum electronic devices.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.