Improvement of Field Emission Performance of Multilayered Porous Silicon-Based Electron Source Through Hydrogen Passivation

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Li He;Sailei Li;Qi He;Biqi Miao;Qinglei Jiang;Guiying Shen;Wei Luo
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引用次数: 0

Abstract

This letter proposes an electrochemical-induced hydrogen passivation (CHP) method to improve the field emission performance of the multilayered porous silicon (MPS)-based electron source. We show that CHP treatment enhances the surface morphology of MPS and compensates for inefficient oxidation in the top half of the MPS layer caused by electrochemical oxidation (ECO), achieving complete and uniform oxidation properties for continuous electron acceleration. The measurement results demonstrate that this simple and convenient method significantly enhances the emission current and efficiency, while also improving the repeatability and stability of the MPS-based electron source. Therefore, CHP is a valuable method to enhance the cold emission properties of MPS-based electron sources, making it a promising on-chip electron emitter in vacuum electronic devices.
通过氢钝化改善多层多孔硅电子源的场发射性能
本文提出了一种电化学诱导氢钝化(CHP)方法,以改善基于多层多孔硅(MPS)的电子源的场发射性能。我们的研究表明,CHP 处理可以增强多孔硅的表面形貌,并弥补电化学氧化(ECO)导致的多孔硅层上半部分氧化效率低下的问题,从而实现连续电子加速所需的完整而均匀的氧化特性。测量结果表明,这种简单方便的方法显著提高了发射电流和效率,同时也提高了基于 MPS 的电子源的可重复性和稳定性。因此,CHP 是增强基于 MPS 的电子源冷发射特性的一种有价值的方法,使其成为真空电子设备中一种前景广阔的片上电子发射器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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