Optical Mapping of Local Threshold Voltage With Micrometer Resolution in AlGaN/GaN HEMTs

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-07-30 DOI:10.1109/LED.2024.3435471

Anjali Anjali;James W. Pomeroy;Jr-Tai Chen;Martin Kuball

引用次数: 0

Abstract

An electroluminescence (EL) based method is introduced for micrometer-spatial resolution quantitative threshold voltage mapping across transistors, illustrated on GaN HEMTs. The threshold voltage determined using the optical method is confirmed to be consistent with the conventional electrical method that averages a whole device. With this approach, we illustrate spatial variations in threshold voltage along the gate finger width with a spatial resolution of

$1~\mu $

m and a voltage resolution of less than 10 mV. Changes in threshold voltage after device stress are shown.

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以微米级分辨率绘制 AlGaN/GaN HEMT 中局部阈值电压的光学图谱

以 GaN HEMT 为例，介绍了一种基于电致发光 (EL) 的方法，用于绘制晶体管的微米空间分辨率定量阈值电压图。使用光学方法确定的阈值电压与平均整个器件的传统电学方法一致。利用这种方法，我们可以说明阈值电压沿栅指宽度的空间变化，空间分辨率为 1~mu $ m，电压分辨率小于 10 mV。图中显示了器件受力后阈值电压的变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.