High-Performance and Linearly Polarized MoTe₂/ReS₂ Heterojunction Phototransistors

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-07-31 DOI:10.1109/LED.2024.3436083

Ran Ma;Qiuhong Tan;Peizhi Yang;Yingkai Liu;Qianjin Wang

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引用次数: 0

Abstract

Two-dimensional transition metal dichalcogenides have garnered significant research interest due to their excellent photoelectric properties. However, the low photocurrent to dark current ratio has restricted their application in visible light imaging. In this study, we fabricated a high-performance phototransistor using a MoTe ₂ and ReS ₂ flakes heterojunction to enhance the application potential of phototransistors. The resulting device exhibited a high responsivity of 65.4 A/W, a large current on/off ratio of 43.7, a fast response speed of 480/

$490~\mu $

s, an external quantum efficiency of up to

${1}.{38}\times {10} ^{{4}}$

%, specific detectivity reaching up to

${6}.{25}\times {10} ^{{12}}$

Jones, a subthreshold swing as low as 125 mV/dec, and carrier mobility up to 319 cm ² /V

$\cdot $

s. Notably, the photodetector based on this heterojunction demonstrates visible light imaging functionality. Our work paves the way for developing high-performance phototransistors.

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高性能线性偏振 MoTe2/ReS2 异质结光电晶体管

二维过渡金属二钙化物因其出色的光电特性而备受研究关注。然而，由于光电流与暗电流的比率较低，限制了它们在可见光成像中的应用。在本研究中，我们利用 MoTe2 和 ReS2 薄片异质结制造了一种高性能光电晶体管，以提高光电晶体管的应用潜力。该器件具有 65.4 A/W 的高响应率、43.7 的大电流开/关比、480/ 490~\mu $ s 的快速响应速度、高达 ${1}.{38}\times {10} 的外部量子效率。^{{4}}$ %，特定检测率高达 ${6}.{25}\times {10}}$ 。值得注意的是，基于这种异质结的光电探测器具有可见光成像功能。我们的工作为开发高性能光电晶体管铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.