Influence of Hydrogen Additive on Electrophysical Parameters and Emission Spectra of Tetrafluoromethane Plasma

Q4 Engineering

Russian Microelectronics Pub Date : 2024-07-26 DOI:10.1134/s1063739724600183

D. B. Murin, A. Yu. Grazhdyan, I. A. Chesnokov, I. A. Gogulev

引用次数: 0

Abstract

The influence of the addition of hydrogen on the electrophysical parameters and emission spectra of tetrafluoromethane under conditions of a direct current glow discharge is studied. It is established that the gas temperature changes nonlinearly with an increasing proportion of hydrogen in the plasma-forming mixture. The emission spectra of tetrafluoromethane plasma with hydrogen are obtained and analyzed. It is shown that plasma radiation is represented by atomic and molecular components, and the dependencies of the line radiation intensities on the external conditions of the discharge are determined by the excitation of emitting states during direct electron impacts.

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氢添加剂对四氟甲烷等离子体电物理参数和发射光谱的影响

摘要研究了在直流辉光放电条件下添加氢气对四氟甲烷的电物理参数和发射光谱的影响。结果表明，随着氢在等离子体形成混合物中所占比例的增加，气体温度会发生非线性变化。获得并分析了含氢的四氟甲烷等离子体的发射光谱。结果表明，等离子体辐射由原子和分子成分表示，线辐射强度与放电外部条件的关系由电子直接撞击时激发的发射态决定。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Russian Microelectronics Materials Science-Materials Chemistry

CiteScore

0.70

自引率

0.00%

发文量

期刊介绍： Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.