Toward a GHz-Frequency BEOL Ferroelectric Negative-Capacitance Oscillator With a Wide Tuning Range

IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Ji Kai Wang;Collin VanEssen;Nuoyi Yang;Zhi Cheng Yuan;Prasad S. Gudem;Diego Kienle;Mani Vaidyanathan
{"title":"Toward a GHz-Frequency BEOL Ferroelectric Negative-Capacitance Oscillator With a Wide Tuning Range","authors":"Ji Kai Wang;Collin VanEssen;Nuoyi Yang;Zhi Cheng Yuan;Prasad S. Gudem;Diego Kienle;Mani Vaidyanathan","doi":"10.1109/TNANO.2024.3430221","DOIUrl":null,"url":null,"abstract":"The potential to utilize negative-capacitance dynamics in a ferroelectric capacitor as a back-end-of-line (BEOL) element to construct a tuned oscillator operating in the GHz range is proposed and investigated. Using tools established in the field of non-linear dynamics, the operating principles of the circuit are rigorously explored, a criterion for oscillation is developed, and amplitude and frequency control are investigated. Furthermore, this novel architecture is compared with a traditional LC oscillator. Through the comparison, we find that the FE oscillator can provide a substantially larger tuning range (149%, between 1.29 GHz–8.75 GHz, vs. 50% achieved by the traditional LC oscillator) and requires a vastly lower on-chip area \n<inline-formula><tex-math>$(\\sim\\!\\! 50\\,{\\bm{\\mu}}{{\\mathbf{m}}^2}\\,\\text{vs}{\\rm{.}}\\,\\sim 40000\\,{\\bm{\\mu}}{{\\mathbf{m}}^2})$</tex-math></inline-formula>\n, while achieving a similar figure of merit \n<inline-formula><tex-math>$\\mathbf{FO}{{\\mathbf{M}}_2}$</tex-math></inline-formula>\n (reduced by only 6 dB). Such improvements motivate the continued exploration and development of negative-capacitance ferroelectrics as BEOL elements that can significantly improve integrated-circuit performance.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.1000,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nanotechnology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10603433/","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

The potential to utilize negative-capacitance dynamics in a ferroelectric capacitor as a back-end-of-line (BEOL) element to construct a tuned oscillator operating in the GHz range is proposed and investigated. Using tools established in the field of non-linear dynamics, the operating principles of the circuit are rigorously explored, a criterion for oscillation is developed, and amplitude and frequency control are investigated. Furthermore, this novel architecture is compared with a traditional LC oscillator. Through the comparison, we find that the FE oscillator can provide a substantially larger tuning range (149%, between 1.29 GHz–8.75 GHz, vs. 50% achieved by the traditional LC oscillator) and requires a vastly lower on-chip area $(\sim\!\! 50\,{\bm{\mu}}{{\mathbf{m}}^2}\,\text{vs}{\rm{.}}\,\sim 40000\,{\bm{\mu}}{{\mathbf{m}}^2})$ , while achieving a similar figure of merit $\mathbf{FO}{{\mathbf{M}}_2}$ (reduced by only 6 dB). Such improvements motivate the continued exploration and development of negative-capacitance ferroelectrics as BEOL elements that can significantly improve integrated-circuit performance.
开发具有宽调谐范围的 GHz 频率 BEOL 负电容铁电振荡器
本文提出并研究了利用铁电电容器中的负电容动力学作为线路后端(BEOL)元件来构建工作在 GHz 范围内的调谐振荡器的可能性。利用在非线性动力学领域建立的工具,对电路的工作原理进行了严格探索,制定了振荡标准,并研究了振幅和频率控制。此外,我们还将这种新型结构与传统的 LC 振荡器进行了比较。通过比较,我们发现 FE 振荡器可以提供更大的调谐范围(149%,在 1.29 GHz-8.75 GHz 之间,而传统 LC 振荡器仅能达到 50%),而且所需的片上面积也大大降低!50,{\bm{\mu}}{{\mathbf{m}}^2}\,\text{vs}{\rm{.}}\,\sim 40000\,{\bm{\mu}}{{\mathbf{m}}^2}) $,同时实现了类似的优点系数 $\mathbf{FO}{{\mathbf{M}}_2}$ (仅降低了 6 dB)。这些改进促使人们继续探索和开发负电容铁电材料,将其作为 BEOL 元件,从而显著提高集成电路的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology 工程技术-材料科学:综合
CiteScore
4.80
自引率
8.30%
发文量
74
审稿时长
8.3 months
期刊介绍: The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
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