Effect of Si substrate conductivity on surface acoustic wave resonator

IF 0.7 4区 材料科学 Q3 Materials Science
Dahao Wu, Y. Shuai, Zijie Wei, Wei Fan, Peiran Li, Xinqiang Pan, W. Luo, Chuangui Wu, W. Zhang
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引用次数: 0

Abstract

A surface acoustic wave (SAW) filter’s bandwidth and quality are determined by its resonators’ electromechanical coupling coefficient (k2) and impedance ratio (IR). Research commonly focuses on the effects of piezoelectric material and cutting direction on these parameters. This paper investigates the effect of the conductivity of the Si substrate on k2 and IR through finite element method (FEM) simulations. A new model based on the modified Butterworth-van-Dyke (MBVD) model is presented. This new model takes into account the substrate parasitic capacitance and resistance to predict resonator performance on low resistivity (LR) Si piezoelectric on insulator (POI) substrates. Both high resistivity (HR) Si and LR-Si are utilized to fabricate POI SAW resonators, which are subsequently tested. The high conductivity of the Si support layer leads to a decrease in both k2 and IR. By employing Si substrates with different resistances during fabrication, it becomes possible to manufacture resonators with varying k2 values, thus meeting diverse bandwidth requirements for filters.
硅衬底电导率对表面声波谐振器的影响
声表面波(SAW)滤波器的带宽和质量取决于谐振器的机电耦合系数(k2)和阻抗比(IR)。研究通常侧重于压电材料和切割方向对这些参数的影响。本文通过有限元法(FEM)模拟研究了硅基板的导电性对 k2 和 IR 的影响。本文提出了一个基于改良巴特沃斯-范-戴克(MBVD)模型的新模型。这一新模型考虑了基底寄生电容和电阻,可预测低电阻率 (LR) 硅绝缘体压电 (POI) 基底上谐振器的性能。高电阻率 (HR) 硅和低电阻率硅均用于制造 POI 声表面波谐振器,随后对其进行了测试。硅支撑层的高电导率导致 k2 和 IR 下降。通过在制造过程中采用不同电阻率的硅衬底,可以制造出不同 k2 值的谐振器,从而满足滤波器的不同带宽要求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Materials Express
Materials Express NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY
自引率
0.00%
发文量
69
审稿时长
>12 weeks
期刊介绍: Information not localized
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