{"title":"A composite model of memristors based on barrier and dopant drift mechanisms","authors":"","doi":"10.1016/j.sse.2024.108990","DOIUrl":null,"url":null,"abstract":"<div><p>This paper presents a hybrid model for TiO<sub>2</sub>-based memristors, integrating the dopant drift mechanism with the Schottky barrier theory. We introduce the movement of oxygen vacancies as a dynamic variable to modulate changes in memristors. Furthermore, the variation of the dominate mechanism of the TiO<sub>2</sub> memristors under different operating conditions is studied, which is related to the position of the internal oxygen vacancy. The proposed model accurately captures the rectification linearity, and effectively elucidates the dominant current mechanisms manifested in six distinct regions of the <em>I</em>-<em>V</em> curves. Our model exhibits better predication with reduced errors when applied to Pt/TiO<sub>2</sub>/Pt memristors. The proposed model can well describe the dual-mechanism memristor phenomenon, and provides a reference for the subsequent study of multi-mechanism behavior in memristors.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124001394","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a hybrid model for TiO2-based memristors, integrating the dopant drift mechanism with the Schottky barrier theory. We introduce the movement of oxygen vacancies as a dynamic variable to modulate changes in memristors. Furthermore, the variation of the dominate mechanism of the TiO2 memristors under different operating conditions is studied, which is related to the position of the internal oxygen vacancy. The proposed model accurately captures the rectification linearity, and effectively elucidates the dominant current mechanisms manifested in six distinct regions of the I-V curves. Our model exhibits better predication with reduced errors when applied to Pt/TiO2/Pt memristors. The proposed model can well describe the dual-mechanism memristor phenomenon, and provides a reference for the subsequent study of multi-mechanism behavior in memristors.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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