Antiferromagnetic Spintronics in Magnetic Memory Devices

Abstract

Antiferromagnetic spintronics, leveraging the distinct properties of antiferromagnetic materials, represents a rapidly advancing frontier in the realm of magnetic memory devices. Theoretical and experimental research has significantly propelled this field forward. Notably, antiferromagnetic materials, with their rapid spin dynamics and reduced sensitivity to stray magnetic fields, emerge as superior candidates for spintronic memory applications compared to traditional ferromagnets. This paper begins by evaluating the potential of antiferromagnetism as a robust spin source and its inherent advantage in field-free switching, pivotal for enhancing memory device efficiency. We then critically review the innovative mechanisms for manipulating and detecting the magnetic states of antiferromagnets, underscoring their integral role in the functional advancement of magnetic memory technologies. Subsequently, we explore a range of magnetic memory devices that integrate antiferromagnets into various functional layers, showcasing their versatility. The final section projects the evolving landscape of antiferromagnetic applications within magnetic memory devices, emphasizing their promising trajectory in revolutionizing memory storage solutions.