Research on thermal management of 3D-ICs assisted by deep learning

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Sixiang Zhang , Qiuping Yang , Zhiyuan Zhu
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引用次数: 0

Abstract

Compared with integrated circuits based on through silicon via (TSV), monolithic inter-tier via (MIV) has been identified as a critical technique to enable three dimensional (3D) integration due to its ultra-small size and relatively superior electrical performance, which allows ultra-high integration density. However, the interconnection of monolithic 3D (M3D) design is more prone to electromigration and stress migration. Severe crosstalk during signal transmission and thermal stress at high temperatures have serious limitations on system performance. In this paper, we focus on the COMSOL Multi-physics software, which can solve multi-field problems, to study the crosstalk problem and its thermal stress problem in MIV structures and analyze the crosstalk effects and temperature stress changes of MIV under different physical coupling conditions. An MIV array based on electrical-thermal-mechanical multi-field coupling was proposed, and the temperature and stress were analyzed by finite element analysis software. Additionally, an artificial neural network scheme is proposed that uses MATLAB to train temperature and stress data to predict the stress values of MIV. Experimental results show that the proposed prediction model using a genetic algorithm to optimize the BP Neural Network (GABP) has a 23.3 % higher prediction accuracy than that of a general BP neural network.

深度学习辅助 3D-IC 热管理研究
与基于硅通孔(TSV)的集成电路相比,单片层间通孔(MIV)因其超小型尺寸和相对优越的电气性能而被认为是实现三维(3D)集成的关键技术,可实现超高的集成密度。然而,单片三维(M3D)设计的互连更容易发生电迁移和应力迁移。信号传输过程中的严重串扰和高温下的热应力严重限制了系统性能。本文主要利用可解决多场问题的 COMSOL 多物理场软件研究 MIV 结构中的串扰问题及其热应力问题,分析不同物理耦合条件下 MIV 的串扰效应和温度应力变化。提出了一种基于电-热-机多场耦合的 MIV 阵列,并利用有限元分析软件对其温度和应力进行了分析。此外,还提出了一种人工神经网络方案,利用 MATLAB 训练温度和应力数据来预测 MIV 的应力值。实验结果表明,利用遗传算法优化 BP 神经网络(GABP)的预测模型比一般 BP 神经网络的预测精度高 23.3%。
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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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